BSC021N08NS5ATMA1 vs IPT007N06NATMA1 Perbandingan

Perbandingan bersamaan detil BSC021N08NS5ATMA1 dari Infineon dan IPT007N06NATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 ✓ Aktif
Infineon
IPT007N06NATMA1 IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC021N08NS5ATMA1 IPT007N06NATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC021N08NS5ATMA1 —
Technology OptiMOS 5 (N-channel trench) OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (V_DS max) 80 V —
Continuous Drain Current (I_D, Tc=25°C) 226 A —
Continuous Drain Current (I_D, Tc=100°C) 100 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) max (V_GS=10 V) 2.1 mΩ —
Gate-Source Voltage V_GS max ±20 V —
Power Dissipation P_D (Tc=25°C) 214 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket SuperSO8 5x6 (PG-TSON-8-3) PG-HSOF-8-1 (TOLL)
Tipe Mounting Surface Mount Surface Mount
Total Gate Charge Q_G typ [DATA_NEEDED: total gate charge] —
R_thJC thermal resistance max [DATA_NEEDED: R_thJC] —
Status RoHS Compliant (Pb-free) Compliant
Level MSL MSL 1 (per JEDEC J-STD-020) MSL 1 (per JEDEC J-STD-020)
Avalanche Energy Rated Yes (single-pulse) —
Delivery Form Tape & Reel (T&R) —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, TC=25C) — 300 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on), VGS=10V max) — 0.75 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Power Dissipation (PD, TC=25C) — 375 W
Rentang Suhu Kerja — -55 C to +175 C (TJ)
Configuration — Single N-channel
Gate Charge (QG) — [DATA_NEEDED: total gate charge]
Avalanche Energy (EAS) — [DATA_NEEDED: single-pulse avalanche energy]
Thermal Resistance (RthJC max) — [DATA_NEEDED: RthJC]
Lead-Free — Yes
Bebas Halogen — Yes
Standard Pack Quantity — 3000 (Tape & Reel)

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