BSC022N04LS6ATMA1 vs BSC026N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC022N04LS6ATMA1 by Infineon and BSC026N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon
BSC022N04LS6ATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC022N04LS6ATMA1 | BSC026N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS™ 6 (N-channel trench) | Trench-gate OptiMOS™ 5 |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 27 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Pulsed Drain Current (IDM) | 139 A | — |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 79 W | 63 W |
| Package | SuperSO8 5x6 (PG-TDSON-8-1) | PG-TDSON-8-6 (TDSON 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| Pin Count | 8 | — |
| Operating Temperature | -55 C to +175 C (junction) | — |
| RoHS Status | Compliant | Compliant |
| Part Family | — | OptiMOS™ 5 N-Channel Power MOSFET |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 23 A |
| Continuous Drain Current (ID, Tc=25°C) | — | 100 A |
| Pulsed Drain Current (IDM, Tc=25°C) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 2.6 mΩ |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: max RDS(on)] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Operating Temperature Range | — | -55°C to +150°C |