BSC023N08NS5SCATMA1 vs BSC050NE2LSATMA1 Comparison

Detailed side-by-side comparison of BSC023N08NS5SCATMA1 by Infineon and BSC050NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC050NE2LSATMA1

BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon

BSC050NE2LSATMA1 βœ“ Active

Specification Comparison

Parameter BSC023N08NS5SCATMA1 BSC050NE2LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.36
Manufacturer Infineon Technologies β€”
Part Number BSC023N08NS5SCATMA1 β€”
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 25V (trench)
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID, Tc=25Β°C) 202 A β€”
Power Dissipation (PD, Tc=25Β°C) 188 W β€”
On-State Resistance RDS(on) typ. 2.3 mΞ© at VGS=10 V, ID=50 A β€”
Gate Threshold Voltage VGS(th) typ. 3.8 V β€”
Total Gate Charge Qg 98 nC at VGS=10 V β€”
Input Capacitance Ciss 6.8 nF β€”
Output Capacitance Coss 74 pF β€”
Thermal Resistance RthJC 0.72 K/W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-WSON-8-2 (SuperSO8 DSC) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
FET Type β€” N-Channel
Drain-Source Voltage (V_DS) β€” 25 V
Continuous Drain Current (I_D) at Tc=25C β€” 58 A
Continuous Drain Current (I_D) at Ta=25C β€” 39 A
R_DS(on) max at V_GS=10V β€” 5 mOhm
R_DS(on) typical at V_GS=10V β€” 4.2 mOhm
Gate-Source Voltage (V_GS) max β€” [DATA_NEEDED: V_GS max rating]
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: V_GS(th) typical]
Power Dissipation at Ta=25C β€” 2.5 W
Power Dissipation at Tc=25C β€” 28 W
Operating Temperature Range β€” -55C to +150C

Datasheets & Resources

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