BSC032N04LSATMA1 vs IAUC60N04S6L039ATMA1 Comparison

Detailed side-by-side comparison of BSC032N04LSATMA1 by Infineon and IAUC60N04S6L039ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC032N04LSATMA1

BSC032N04LSATMA1 - 40V 3.2mΞ© OptiMOS 5 N-MOSFET | Infineon

BSC032N04LSATMA1 βœ“ Active
Infineon
IAUC60N04S6L039ATMA1

IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 βœ“ Active

Specification Comparison

Parameter BSC032N04LSATMA1 IAUC60N04S6L039ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.72
Manufacturer Infineon Technologies β€”
Part Series OptiMOS 5 40V β€”
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at Ta=25Β°C 21 A β€”
Continuous Drain Current (ID) at Tc=25Β°C 98 A β€”
RDS(on) max at VGS=10V 3.2 mΞ© β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 52 W β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Technology OptiMOS 5 trench OptiMOS 6 (trench)
Package PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TDSON-8 (SSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55Β°C to +175Β°C -55C to +175C
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Drain-Source Voltage (V_DS) β€” 40 V
Continuous Drain Current (I_D, T_C=25C) β€” 60 A
Pulsed Drain Current (I_DM) β€” 240 A
R_DS(on) max @ V_GS=10V β€” 3.9 milliohm
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Q_G) β€” [DATA_NEEDED: total gate charge]
Power Dissipation (P_D) β€” 42 W
MSL Level β€” 1 (per JEDEC J-STD-020)
Automotive Qualification β€” AEC-Q101 qualified
Avalanche Rated β€” Yes (100% avalanche tested)

Datasheets & Resources

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