BSC032N04LSATMA1 vs IAUC60N04S6L039ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC032N04LSATMA1 sa pamamagitan ng Infineon at IAUC60N04S6L039ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6L039ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC032N04LSATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Series | OptiMOS 5 40V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 98 A | — |
| RDS(on) max at VGS=10V | 3.2 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 52 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Technology | OptiMOS 5 trench | OptiMOS 6 (trench) |
| Packhaging | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8 (SSO8) 5x6 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature ng Junction na Operasyon | -55°C to +175°C | -55C to +175C |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 60 A |
| Pulsed Drain Current (I_DM) | — | 240 A |
| R_DS(on) max @ V_GS=10V | — | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | — | 42 W |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Rated | — | Yes (100% avalanche tested) |