BSC032N04LSATMA1 vs IAUC60N04S6L039ATMA1 Comparación
Comparación detallada lado a lado de BSC032N04LSATMA1 por Infineon y IAUC60N04S6L039ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC032N04LSATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,32 | $0,72 |
| Manufacturer | Infineon Technologies | — |
| Part Series | OptiMOS 5 40V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 98 A | — |
| RDS(on) max at VGS=10V | 3.2 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 52 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Technology | OptiMOS 5 trench | OptiMOS 6 (trench) |
| Encapsulado | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8 (SSO8) 5x6 mm |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de unión de funcionamiento | -55°C to +175°C | -55C to +175C |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 60 A |
| Pulsed Drain Current (I_DM) | — | 240 A |
| R_DS(on) max @ V_GS=10V | — | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | — | 42 W |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Rated | — | Yes (100% avalanche tested) |