BSC032N04LSATMA1 vs IPD031N06L3GATMA1 Comparison
Detailed side-by-side comparison of BSC032N04LSATMA1 by Infineon and IPD031N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΞ© N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC032N04LSATMA1 | IPD031N06L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Part Series | OptiMOS 5 40V | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 21 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | 98 A | β |
| RDS(on) max at VGS=10V | 3.2 mΞ© | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 52 W | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Technology | OptiMOS 5 trench | MOSFET (Metal Oxide) |
| Package | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 100 A |
| Pulsed Drain Current (IDM) | β | 400 A |
| Maximum Power Dissipation (PD) at TC=25Β°C | β | 167 W |
| RDS(on) Max at VGS=10V | β | 3.1 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 1.0 V to 2.2 V |
| Gate Drive Voltage (Max RDS(on)) | β | 4.5 V, 10 V |
| Total Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg typical value] |
| Operating Temperature Range | β | -55Β°C to +175Β°C |
| Series | β | OptiMOS 3 |
| MSL Level | β | 1 (Unlimited) |