BSC039N06NSATMA1 vs BSC021N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC039N06NSATMA1 by Infineon and BSC021N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC039N06NSATMA1
BSC039N06NSATMA1 - 60V 3.9mΞ© 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 β Active
Specification Comparison
| Parameter | BSC039N06NSATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TA | 19 A | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value at TC] | β |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mOhm | β |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| Power Dissipation at TA (PD) | 2.5 W | β |
| Power Dissipation at TC (PD) | 69 W | β |
| Operating Junction Temperature | -55C to +150C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-6 (TDSON EP, 5x6 mm) | SuperSO8 5x6 (PG-TSON-8-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | β |
| Gate Drive Voltage (VGS) | Β±20 V max | β |
| Technology | OptiMOS 5 (TrenchFET-style) | OptiMOS 5 (N-channel trench) |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant (Pb-free) |
| Part Number | β | BSC021N08NS5ATMA1 |
| Drain-Source Voltage (V_DS max) | β | 80 V |
| Continuous Drain Current (I_D, Tc=25Β°C) | β | 226 A |
| Continuous Drain Current (I_D, Tc=100Β°C) | β | 100 A |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max (V_GS=10 V) | β | 2.1 mΞ© |
| Gate-Source Voltage V_GS max | β | Β±20 V |
| Power Dissipation P_D (Tc=25Β°C) | β | 214 W |
| Total Gate Charge Q_G typ | β | [DATA_NEEDED: total gate charge] |
| R_thJC thermal resistance max | β | [DATA_NEEDED: R_thJC] |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| Delivery Form | β | Tape & Reel (T&R) |