BSC039N06NSATMA1 vs BSC021N08NS5ATMA1 Comparaison
Comparaison détaillée côte à côte de BSC039N06NSATMA1 par Infineon et BSC021N08NS5ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC039N06NSATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,46 | $0,81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA | 19 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value at TC] | — |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Power Dissipation at TA (PD) | 2.5 W | — |
| Power Dissipation at TC (PD) | 69 W | — |
| Température de jonction en fonctionnement | -55C to +150C | -55 °C to +175 °C |
| Boîtier | PG-TDSON-8-6 (TDSON EP, 5x6 mm) | SuperSO8 5x6 (PG-TSON-8-3) |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 8 | — |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| Technology | OptiMOS 5 (TrenchFET-style) | OptiMOS 5 (N-channel trench) |
| Niveau MSL | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| Statut RoHS | Compliant | Compliant (Pb-free) |
| Part Number | — | BSC021N08NS5ATMA1 |
| Drain-Source Voltage (V_DS max) | — | 80 V |
| Continuous Drain Current (I_D, Tc=25°C) | — | 226 A |
| Continuous Drain Current (I_D, Tc=100°C) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max (V_GS=10 V) | — | 2.1 mΩ |
| Gate-Source Voltage V_GS max | — | ±20 V |
| Power Dissipation P_D (Tc=25°C) | — | 214 W |
| Total Gate Charge Q_G typ | — | [DATA_NEEDED: total gate charge] |
| R_thJC thermal resistance max | — | [DATA_NEEDED: R_thJC] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Delivery Form | — | Tape & Reel (T&R) |