BSC039N06NSATMA1 vs BSC021N08NS5ATMA1 비교

다음의 상세 나란히 비교: BSC039N06NSATMA1 제조: Infineon 및 BSC021N08NS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 ✓ 활성

사양 비교

파라미터 BSC039N06NSATMA1 BSC021N08NS5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.46 $0.81
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
트랜지스터 유형 N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA 19 A —
Continuous Drain Current (ID) at TC 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value at TC] —
On-Resistance RDS(on) max at VGS=10V 3.9 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Power Dissipation at TA (PD) 2.5 W —
Power Dissipation at TC (PD) 69 W —
동작 접합 온도 -55C to +150C -55 °C to +175 °C
패키지 PG-TDSON-8-6 (TDSON EP, 5x6 mm) SuperSO8 5x6 (PG-TSON-8-3)
실장 유형 Surface Mount Surface Mount
핀 수 8 —
Gate Drive Voltage (VGS) ±20 V max —
Technology OptiMOS 5 (TrenchFET-style) OptiMOS 5 (N-channel trench)
MSL 레벨 [DATA_NEEDED: MSL rating] MSL 1 (per JEDEC J-STD-020)
RoHS 상태 Compliant Compliant (Pb-free)
Part Number — BSC021N08NS5ATMA1
Drain-Source Voltage (V_DS max) — 80 V
Continuous Drain Current (I_D, Tc=25°C) — 226 A
Continuous Drain Current (I_D, Tc=100°C) — 100 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max (V_GS=10 V) — 2.1 mΩ
Gate-Source Voltage V_GS max — ±20 V
Power Dissipation P_D (Tc=25°C) — 214 W
Total Gate Charge Q_G typ — [DATA_NEEDED: total gate charge]
R_thJC thermal resistance max — [DATA_NEEDED: R_thJC]
Avalanche Energy Rated — Yes (single-pulse)
Delivery Form — Tape & Reel (T&R)

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