BSC040N08NS5ATMA1 vs BSC033N08NS5SCATMA1 Comparison
Detailed side-by-side comparison of BSC040N08NS5ATMA1 by Infineon and BSC033N08NS5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC040N08NS5ATMA1 - 80V 100A 4mOhm OptiMOS 5 MOSFET | Infineon
BSC040N08NS5ATMA1 β ActiveInfineon
BSC033N08NS5SCATMA1
BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon
BSC033N08NS5SCATMA1 β ActiveSpecification Comparison
| Parameter | BSC040N08NS5ATMA1 | BSC033N08NS5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC040N08NS5ATMA1 | β |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | Trench (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Maximum Drain Current (ID, Tc=25C, package-limited) | 121 A | β |
| On-Resistance (RDS(on) max, VGS=10V) | 4 mOhm | β |
| Power Dissipation (Ta=25C, 1inΒ² PCB) | 2.5 W | β |
| Power Dissipation (Tc=25C) | 104 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-WSON-8-2 (SuperSO8 DSC) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +175 C | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | +/- 20 V |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typical value] |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Primary Application | Synchronous rectification in telecom and server power supplies | β |
| Series | β | OptiMOS 5 |
| FET Type | β | N-Channel |
| Continuous Drain Current (Tc) | β | 144 A |
| Power Dissipation (Tc) | β | 136 W |
| RDS(on) max @ VGS=10V | β | 3.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Thermal Resistance RthJC | β | 0.86 K/W |
| Operating Temperature Range | β | -55C to +175C |