BSC040N08NS5ATMA1 vs BSC033N08NS5SCATMA1 比較
詳細並排比較 BSC040N08NS5ATMA1 由 Infineon 與 BSC033N08NS5SCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC040N08NS5ATMA1 | BSC033N08NS5SCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC040N08NS5ATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | Trench (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Maximum Drain Current (ID, Tc=25C, package-limited) | 121 A | — |
| On-Resistance (RDS(on) max, VGS=10V) | 4 mOhm | — |
| Power Dissipation (Ta=25C, 1in² PCB) | 2.5 W | — |
| Power Dissipation (Tc=25C) | 104 W | — |
| 封裝 | PG-TDSON-8-7 (SuperSO8 5x6) | PG-WSON-8-2 (SuperSO8 DSC) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作接面溫度 | -55 C to +175 C | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | +/- 20 V |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typical value] |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | 1 |
| Primary Application | Synchronous rectification in telecom and server power supplies | — |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current (Tc) | — | 144 A |
| Power Dissipation (Tc) | — | 136 W |
| RDS(on) max @ VGS=10V | — | 3.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Thermal Resistance RthJC | — | 0.86 K/W |
| 工作溫度範圍 | — | -55C to +175C |