BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon
MPN: BSC033N08NS5SCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.25 | $12.50 |
| 100 | $1.05 | $105.00 |
| 500 | $0.88 | $440.00 |
| 1,000 | $0.74 | $740.00 |
| 5,000 | $0.62 | $3,100.00 |
Drop-in alternatives for BSC033N08NS5SCATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC040N08NS5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.15 / Unit
View Datasheet →BSC052N08NS5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.52 / Unit
View Datasheet →BSC123N08NS3GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.71 / Unit
View Datasheet →BSC027N06LS5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.66 / Unit
View Datasheet →BSC033N08NS5SCATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (Tc) | 144 A |
| Power Dissipation (Tc) | 136 W |
| RDS(on) max @ VGS=10V | 3.3 mOhm |
| Gate-Source Voltage (VGS) | +/- 20 V |
| Thermal Resistance RthJC | 0.86 K/W |
| Package | PG-WSON-8-2 (SuperSO8 DSC) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C |
| Technology | Trench (OptiMOS 5) |
| RoHS Status | Compliant |
| MSL Level | 1 |
BSC033N08NS5SCATMA1 Pin Configuration
| Pin 1 | S — Source |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | D — Drain (exposed pad) |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
Safe Operating Area (SOA)
Typical Applications
BSC033N08NS5SCATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, Hot-Swap and OR-ing in Server Power Distribution, Motor Drive H-Bridges for Power Tools, Battery Protection in Industrial UPS, eBike / Light EV Powertrain, Solar Inverter DC-DC Stage.
48V Telecom Synchronous Rectification
The BSC033N08NS5SCATMA1 is ideally suited for the synchronous-rectifier (SR) MOSFET position in 48 V telecom isolated DC-DC converters (e.g. quarter-brick or eighth-brick modules converting 48 V to 3.3 V/12 V at 30-60 A). The 80 V VDS rating provides ~67% margin above the 48 V nominal bus, comfortably absorbing transient spikes from upstream OR-ing or hot-swap events. The 3.3 mOhm RDS(on) at VGS=10 V keeps conduction losses below 5 W at 40 A load, while the 0.86 K/W RthJC and dual-side cooling allow continuous 144 A operation without external heatsinks beyond PCB copper. The low Qg and Coss of the OptiMOS 5 process minimize switching losses at 200-500 kHz switching frequencies typical of modern telecom bricks.
Recommended
Hot-Swap and OR-ing in Server Power Distribution
In 48 V server power-distribution backplanes, the BSC033N08NS5SCATMA1 functions as the main MOSFET in hot-swap controllers and OR-ing diodes. Its 144 A continuous drain current (Tc) and 136 W power dissipation rating handle inrush currents during board insertion while the low RDS(on) minimizes steady-state voltage drop across the protection element. The OptiMOS 5 avalanche rating provides ruggedness against inductive kickback when the load is suddenly disconnected. The SuperSO8 DSC package's 0.86 K/W RthJC enables compact blade-server layouts where board-to-board airflow is limited, while the dual-cooling paths (top exposed pad + bottom source tabs) keep junction temperatures below 100 C at 80 A continuous load.
Recommended
Motor Drive H-Bridges for Power Tools
The BSC033N08NS5SCATMA1 serves as the low-side and high-side switch in 36 V / 48 V cordless power-tool H-bridge motor drives (drill, impact driver, leaf-blower). The 3.3 mOhm RDS(on) reduces I²R losses during high-torque bursts where motor currents can reach 80-120 A peak, extending battery runtime by 8-12% versus 5 mOhm-class MOSFETs. The 80 V VDS handles the back-EMF of BLDC motors at full speed without avalanche, while the OptiMOS 5 process delivers fast switching edges for 25-50 kHz PWM frequencies used in field-oriented control. The SuperSO8 DSC package fits within the compact motor-control PCBs typical of handheld tools while sustaining high current in continuous-pulse operation.
Recommended
Battery Protection in Industrial UPS
In 48 V industrial UPS systems, the BSC033N08NS5SCATMA1 functions as the disconnect MOSFET between the battery bank and the DC bus. The 144 A continuous drain current supports large battery packs delivering 50-100 A continuous with 500 A peak during inverter startup. The 3.3 mOhm RDS(on) at full load keeps voltage drop across the protection switch below 350 mV, preserving battery capacity and reducing heat-sinking requirements. The device's wide operating temperature range (-55 C to +175 C) and Infineon's automotive-grade OptiMOS 5 reliability make it suitable for harsh industrial environments including outdoor telecom cabinets and factory-floor UPS installations.
Recommended
eBike / Light EV Powertrain
For light electric vehicles (eBikes, e-scooters, neighborhood EVs) operating on 36 V / 48 V battery packs, the BSC033N08NS5SCATMA1 acts as the controller-side switch in the motor inverter and as the main battery disconnect. The 80 V rating handles the 48 V nominal pack plus regenerative-braking voltage transients with substantial safety margin. At 3.3 mOhm RDS(on) and 144 A capability, it delivers up to 7 kW peak motor power within a compact SuperSO8 DSC footprint. The dual-side cooling package supports the high peak-to-average current ratios typical of vehicle acceleration profiles, where junction temperature can swing 40-60 C within a single drive cycle.
Recommended
Solar Inverter DC-DC Stage
In solar micro-inverters and string inverters, the BSC033N08NS5SCATMA1 can be used as the high-side or low-side switch in the DC-DC boost stage following the MPPT controller. The 80 V rating accommodates battery-coupled PV systems with 48 V battery bus plus transient margin. The 3.3 mOhm RDS(on) at 144 A delivers conversion efficiencies above 97% in 1-3 kW residential inverter designs. The OptiMOS 5 trench technology provides the low Qrr (reverse-recovery charge) needed to minimize switching losses when the MOSFET operates in continuous-conduction mode at 50-100 kHz switching frequency.
Recommended
Recommended Products Summary
Engineering reference data for BSC033N08NS5SCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC040N08NS5ATMA1 | BSC052N08NS5ATMA1 | BSC123N08NS3GATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-WSON-8-2 (SuperSO8 DSC) | PG-WSON-8-2 (SuperSO8) - same footprint | PG-WSON-8-2 (SuperSO8) - same footprint | PG-WSON-8-2 (SuperSO8) - same footprint | PG-WSON-8-2 (SuperSO8) - same footprint |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 80 V | 80 V | 60 V |
| Continuous Drain Current (Tc) | 144 A | ~130 A | ~100 A | ~50 A | ~100 A |
| RDS(on) max @ VGS=10V | 3.3 mOhm | 4.0 mOhm | 5.2 mOhm | 12.3 mOhm | 2.7 mOhm |
| Power Dissipation (Tc) | 136 W | ~110 W | ~90 W | ~70 W | 139 W |
| Thermal Resistance RthJC | 0.86 K/W | ~1.1 K/W | ~1.4 K/W | ~1.8 K/W | 0.85 K/W |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 3 (Trench) | OptiMOS 5 (Trench) |
Key Differentiators
- Dual-side cooling (DSC) SuperSO8 package with 0.86 K/W RthJC (vs BSC040N08NS5ATMA1)
- Lowest RDS(on) in the 80V SuperSO8 family at 3.3 mOhm (vs BSC052N08NS5ATMA1)
- OptiMOS 5 generation with lower Qg and Qrr than OptiMOS 3 parts (vs BSC123N08NS3GATMA1)
Design Notes
Estimated: At continuous 100 A load with RDS(on)=3.3 mOhm, conduction loss is approximately 33 W. With the SuperSO8 DSC package's RthJC of 0.86 K/W, the junction-to-case temperature rise is about 28 C. For continuous operation above 80 A, place thermal vias directly beneath the exposed pad (0.3 mm pitch, filled or plugged) and use 2 oz copper on both top and bottom layers to leverage the dual-cooling paths. A junction-temperature calculation should subtract ambient and add heatsink RthJA; aim for Tj(max) below 125 C for reliable long-term operation.
The SuperSO8 DSC package exposes the drain tab on the top surface and bottom thermal pad. Route the high-current drain connection on the top layer through wide copper pours (at least 50 mm wide for 100 A), and place thermal vias in a 0.5 mm grid pattern under the bottom pad. Source pins should also be connected to a wide copper pour on the opposite side. Keep gate-trace length below 10 mm and route it away from drain switching nodes to minimize parasitic gate-drive oscillation. Use a 10 Ohm gate-source resistor to dampen ringing on long gate paths.
Do not exceed VGS=+/-20 V; use a dedicated gate-driver IC (such as the Infineon EiceDRIVER family) instead of a microcontroller GPIO for switching frequencies above 50 kHz. The BSC033N08NS5SCATMA1's 80 V VDS rating must be derated for dynamic transients in 48 V telecom systems - add at least 20% margin for inductive kickback. When paralleling multiple MOSFETs, ensure symmetrical gate-drive paths and matched source-inductance layouts; otherwise current sharing becomes unbalanced at high di/dt. Finally, always check avalanche rating (EAS) when designing with inductive loads.
Place the gate-driver IC within 5 mm of the MOSFET gate pin to minimize gate-loop inductance. Use a kelvin-source connection if available in the package variant; otherwise tie the gate-driver return directly to the source pad adjacent to pin 4 rather than to a remote ground. Add a 100 nF ceramic bypass capacitor between VCC of the gate driver and the local source return to suppress supply ringing. For the synchronous-rectifier position in a half-bridge, add a small RC snubber (10 Ohm + 1 nF) across drain-source to suppress voltage spikes during dead-time.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - refer to IAUT300N08S5N011ATMA1 for automotive-grade equivalent in same family.
