BSC040N10NS5ATMA1 vs BSC040N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC040N10NS5ATMA1 by Infineon and BSC040N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC040N10NS5ATMA1 β ActiveInfineon
BSC040N08NS5ATMA1 - 80V 100A 4mOhm OptiMOS 5 MOSFET | Infineon
BSC040N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC040N10NS5ATMA1 | BSC040N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.93 | $1.15 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 80 V |
| Maximum On-Resistance (RDS(on)) | 4 mOhm | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) max | 136 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 139 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg typical] |
| Output Capacitance Reduction | Up to 44% vs previous generation | β |
| RDS(on) Reduction | Up to 43% vs previous generation | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per Infineon OptiMOS 5 family) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC040N08NS5ATMA1 |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Maximum Drain Current (ID, Tc=25C, package-limited) | β | 121 A |
| On-Resistance (RDS(on) max, VGS=10V) | β | 4 mOhm |
| Power Dissipation (Ta=25C, 1inΒ² PCB) | β | 2.5 W |
| Power Dissipation (Tc=25C) | β | 104 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical] |
| MSL Level | β | 1 |
| Primary Application | β | Synchronous rectification in telecom and server power supplies |