BSC0502NSIATMA1 vs BSC019N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC0502NSIATMA1 by Infineon and BSC019N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC0502NSIATMA1 BSC019N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Technology OptiMOS 5 (Trench MOSFET) OptiMOS 5 (N-channel trench)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC 100 A —
Continuous Drain Current (ID) at TA 26 A —
RDS(on) Max at VGS=10V 2.3 mOhm —
Gate Charge QG (0V to 4.5V) Typ 9.0 nC —
Output Charge QOSS Typ 13.5 nC —
Power Dissipation at TA (Ta=25C) 2.5 W —
Power Dissipation at TC (Tc=25C) 43 W —
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Operating Temperature Range -55C to +150C -55 C to +150 C
Package PG-TDSON-8 (SuperSO8 5x6) PG-TSON-8-3 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Polarity — N-Channel
Drain-Source Voltage (VDS) max — 80 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at TA=25C — 28 A
Continuous Drain Current (ID) at TC=25C — 237 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max at VGS=10V — 1.9 mOhm
Gate Threshold Voltage VGS(th) typ — 3.0 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 214 W
MSL Level — 1
Avalanche Rated — Yes

Datasheets & Resources

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