BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
MPN: BSC0502NSIATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.71 | $1.71 |
| 10 | $1.55 | $15.50 |
| 100 | $1.32 | $132.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.98 | $980.00 |
| 3,000 | $0.85 | $2,550.00 |
Drop-in alternatives for BSC0502NSIATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSC0502NSIATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) at TC | 100 A |
| Continuous Drain Current (ID) at TA | 26 A |
| RDS(on) Max at VGS=10V | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC |
| Output Charge QOSS Typ | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | 2.5 W |
| Power Dissipation at TC (Tc=25C) | 43 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TDSON-8 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
BSC0502NSIATMA1 Pin Configuration
| Pin 1 | Source — Source connection (also tied to exposed pad) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
| Pin PAD | Source / Thermal Pad — Exposed pad - source electrical and thermal connection (must be soldered to PCB copper pour) |
Safe Operating Area - DC
Typical Applications
BSC0502NSIATMA1 is suitable for 6 applications: 12V Synchronous Rectifier for Server / GPU VR, Hot-Swap / OR-ing in Redundant 12V / 24V Supplies, Battery Management & Protection in Power Tools / E-Bikes, Brushless DC Motor Drive (Low-Voltage Fans / Pumps), USB-PD Sink / Source Power Path Switch, Load Switch & Power Mux in Industrial 24V Bus Systems.
12V Synchronous Rectifier for Server / GPU VR
The BSC0502NSIATMA1 sits on the low-side of a 12 V to 1 V buck stage, replacing a Schottky rectifier to cut conduction loss. Its 2.3 mOhm Rds_on at 100 A delivers roughly 23 W of conduction loss versus the 60-80 W of a comparable Schottky, freeing up thermal budget and improving total converter efficiency by 2-4%. The 30 V VDS rating provides comfortable headroom above the 12 V bus plus switching spikes, while the 9.0 nC gate charge keeps driver losses small at 300-500 kHz switching frequencies typical of multiphase VR designs.
Recommended
Hot-Swap / OR-ing in Redundant 12V / 24V Supplies
The BSC0502NSIATMA1 is well suited to 12 V and 24 V hot-swap and OR-ing paths where it carries continuous load current during normal operation and blocks reverse current during fault events. Its 100 A continuous rating at TC handles full server PSU load, while the 30 V VDS absorbs inrush transients on the bus. Designers gate the device with a controlled dV/dt during hot-plug to limit inrush, leveraging the part's 13.5 nC QOSS to keep body-diode losses manageable during commutation.
Recommended
Battery Management & Protection in Power Tools / E-Bikes
The BSC0502NSIATMA1 functions as the low-side protection FET in 10-24 V lithium battery packs, switching at low duty cycle for cut-off and short-circuit protection. Its 2.3 mOhm Rds_on contributes minimal loss during normal discharge, and the 100 A capability covers peak motor currents in cordless drills, leaf blowers, and e-bike controllers. The PG-TDSON-8 footprint enables very compact BMS layouts, while the wide operating temperature range supports harsh underhood environments.
Recommended
Brushless DC Motor Drive (Low-Voltage Fans / Pumps)
In 12 V and 24 V brushless DC fans and pumps, the BSC0502NSIATMA1 serves as the low-side phase FET in a 3-phase inverter, switching at 20-50 kHz PWM. The 2.3 mOhm Rds_on keeps I^2R conduction loss low during high-current torque events, while the small SuperSO8 footprint fits inside the motor housing. Combined with companion high-side FETs from the OptiMOS family, this part delivers an integrated inverter solution for compact BLDC designs.
Recommended
USB-PD Sink / Source Power Path Switch
The BSC0502NSIATMA1 enables the 20 V / 5 A power path in USB Power Delivery sink and source designs, replacing older P-channel MOSFETs to reduce conduction loss. Its 30 V VDS handles the 20 V PD bus plus transient ringing at the connector, while the 2.3 mOhm Rds_on keeps voltage drop below 100 mV at 5 A. Gate control is straightforward from a PD controller GPIO, and the SuperSO8 package fits within Type-C connector PCBs.
Recommended
Load Switch & Power Mux in Industrial 24V Bus Systems
The BSC0502NSIATMA1 acts as a low-side or high-side load switch on 24 V industrial buses, where its 30 V VDS provides safe margin above the nominal bus and absorbs switching transients from inductive loads. The 100 A continuous rating handles the inrush of large solenoid or motor loads, while the 2.3 mOhm Rds_on keeps steady-state dissipation low. Factory automation PLCs and distributed I/O modules use this topology for per-channel load management.
Recommended
Recommended Products Summary
Engineering reference data for BSC0502NSIATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0501NSIATMA1 | BSC018N04LSGATMA1 | BSC034N06NSATMA1 | BSC070N10NS5ATMA1 | BSC014N04LSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 (SuperSO8 5x6) | PG-TDSON-8 (SuperSO8 5x6) - same | PG-TDSON-8 (SuperSO8 5x6) - same | PG-TDSON-8 (SuperSO8 5x6) - same | PG-TDSON-8 (SuperSO8 5x6) - same | PG-TDSON-8 (SuperSO8 5x6) - same |
| VDS Max | 30 V | 30 V | 40 V | 60 V | 100 V | 40 V |
| Continuous ID at TC | 100 A | 100 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) Max at VGS=10V | 2.3 mOhm | [DATA_NEEDED: tighter than 2.3 mOhm] | 1.8 mOhm | 3.4 mOhm | 7.0 mOhm | 1.4 mOhm |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Gate Charge QG (0-4.5V) Typ | 9.0 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Output Charge QOSS Typ | 13.5 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Drop-in upgrade path to tighter Rds_on within the same footprint (vs BSC0501NSIATMA1)
- Higher VDS headroom in same PG-TDSON-8 footprint (vs BSC034N06NSATMA1)
- OptiMOS 5 process for lowest gate charge in class (vs BSC070N10NS5ATMA1)
Design Notes
Estimated: At continuous 50 A load with Rds_on of 2.3 mOhm, conduction loss is approximately 5.75 W (I^2 x R). The PG-TDSON-8 source pad must be soldered to at least 1 square inch of 2 oz copper pour on the top and bottom PCB layers with thermal vias to keep junction temperature rise manageable. Without adequate copper, the 26 A TA rating - not the 100 A TC rating - becomes the design limit.
Keep the high-di/dt power loop (drain to bottom FET source to ground return) as short and wide as possible - typically less than 10 mm total loop length in synchronous-rectifier layouts. Place the gate-drive decoupling capacitor within 5 mm of the gate pin to suppress parasitic oscillations. Use a 10 kohm gate-source pull-down resistor to prevent unintended turn-on during high dV/dt transitions.
Do not exceed the 30 V VDS rating even during transient spikes - inductive loads require external snubbers or TVS clamps. The body diode of this MOSFET is not optimized for sustained reverse conduction; if dead-time is excessive, supplement with an external Schottky in parallel. Always verify that the gate driver can source/sink sufficient peak current (typically 1-2 A) to charge the 9.0 nC gate charge within the target switching period.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial and computing applications, not automotive.
