BSC0502NSIATMA1 vs BSZ0501NSIATMA1 Comparison
Detailed side-by-side comparison of BSC0502NSIATMA1 by Infineon and BSZ0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0502NSIATMA1
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 β ActiveInfineon
BSZ0501NSIATMA1
BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
BSZ0501NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC0502NSIATMA1 | BSZ0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.85 | $0.29 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (Trench MOSFET) | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| Continuous Drain Current (ID) at TA | 26 A | β |
| RDS(on) Max at VGS=10V | 2.3 mOhm | β |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC | β |
| Output Charge QOSS Typ | 13.5 nC | β |
| Power Dissipation at TA (Ta=25C) | 2.5 W | β |
| Power Dissipation at TC (Tc=25C) | 43 W | β |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Operating Temperature Range | -55C to +150C | [DATA_NEEDED: Tj max] |
| Package | PG-TDSON-8 (SuperSO8 5x6) | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSZ0501NSIATMA1 |
| Product Family | β | OptiMOS 5 (25V/30V) |
| Drain-Source Voltage (Vds) | β | 30 V |
| Continuous Drain Current (Id) at TA=25C | β | 25 A |
| Continuous Drain Current (Id) at TC=25C | β | 40 A |
| Power Dissipation (Pd) at TA=25C | β | 2.1 W |
| Power Dissipation (Pd) at TC=25C | β | 50 W |
| Operating Mode | β | Enhancement Mode |
| Configuration | β | Single with built-in diode |
| Number of Terminals | β | 8 |
| JESD-609 Code | β | e3 (matte tin) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Rds(on) at Vgs=10V (typ) | β | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th)] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |