BSC0502NSIATMA1 vs BSZ0501NSIATMA1 Comparison

Detailed side-by-side comparison of BSC0502NSIATMA1 by Infineon and BSZ0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC0502NSIATMA1 BSZ0501NSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel
Technology OptiMOS 5 (Trench MOSFET) —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC 100 A —
Continuous Drain Current (ID) at TA 26 A —
RDS(on) Max at VGS=10V 2.3 mOhm —
Gate Charge QG (0V to 4.5V) Typ 9.0 nC —
Output Charge QOSS Typ 13.5 nC —
Power Dissipation at TA (Ta=25C) 2.5 W —
Power Dissipation at TC (Tc=25C) 43 W —
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Operating Temperature Range -55C to +150C [DATA_NEEDED: Tj max]
Package PG-TDSON-8 (SuperSO8 5x6) PG-TSDSON-8-FL (3.3 x 3.3 mm)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSZ0501NSIATMA1
Product Family — OptiMOS 5 (25V/30V)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) at TA=25C — 25 A
Continuous Drain Current (Id) at TC=25C — 40 A
Power Dissipation (Pd) at TA=25C — 2.1 W
Power Dissipation (Pd) at TC=25C — 50 W
Operating Mode — Enhancement Mode
Configuration — Single with built-in diode
Number of Terminals — 8
JESD-609 Code — e3 (matte tin)
MSL Level — [DATA_NEEDED: MSL rating]
Rds(on) at Vgs=10V (typ) — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]

Datasheets & Resources

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