BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
MPN: BSZ0501NSIATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.62 | $6.20 |
| 100 | $0.45 | $45.00 |
| 500 | $0.36 | $180.00 |
| 1,000 | $0.29 | $290.00 |
Drop-in alternatives for BSZ0501NSIATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSZ0501NSIATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSZ0501NSIATMA1 |
| Product Family | OptiMOS 5 (25V/30V) |
| FET Type | N-Channel |
| Drain-Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Id) at TA=25C | 25 A |
| Continuous Drain Current (Id) at TC=25C | 40 A |
| Power Dissipation (Pd) at TA=25C | 2.1 W |
| Power Dissipation (Pd) at TC=25C | 50 W |
| Operating Mode | Enhancement Mode |
| Configuration | Single with built-in diode |
| Package | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Mounting Type | Surface Mount |
| Number of Terminals | 8 |
| JESD-609 Code | e3 (matte tin) |
| RoHS Status | Compliant |
BSZ0501NSIATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal (low-impedance path) |
| Pin 4 | Source — Source terminal |
| Pin 5 | Drain (Thermal Pad) — Drain terminal and thermal pad - solder to PCB copper |
| Pin 6 | Drain — Drain terminal |
| Pin 7 | Drain — Drain terminal |
| Pin 8 | Source — Source terminal |
Safe Operating Area
Typical Applications
BSZ0501NSIATMA1 is suitable for 7 applications: Synchronous Rectification in 12 V VRMs, DC-DC Buck Converters in Notebooks, Battery Protection / OR-ing, Telecom Brick Converters, Low-Voltage Motor Drive, Hot-Swap / In-Rush Protection, USB-PD Power Path Switching.
Synchronous Rectification in 12 V VRMs
The BSZ0501NSIATMA1 fits the synchronous-rectification (low-side) slot of a 12 V VRM or POL converter because its 30 V Vds and 25 A continuous Id comfortably handle 12 V rails with margin, while the small PG-TSDSON-8-FL 3.3 x 3.3 mm footprint maximises power density. Its low Rds(on) and gate charge translate directly to higher converter efficiency at the 300-500 kHz switching frequencies common in multiphase VRMs, and the central exposed drain pad pulls heat directly into the inner copper layer. In a typical 4-phase VRM design, replacing an older OptiMOS 3 part with the BSZ0501NSIATMA1 typically yields 1-2% efficiency gain at full load.
Recommended
DC-DC Buck Converters in Notebooks
The BSZ0501NSIATMA1 is well matched to 19 V-input / 5 V-1 V buck converters in ultrabook and notebook power trees where the 30 V rating gives sufficient transient margin against adapter plug-in spikes. The OptiMOS 5 trench technology minimises switching losses so that the converter can run at 1 MHz+ with high efficiency, shrinking the output inductor and total PCB area. At VIN=19 V, VOUT=5 V, IOUT=10 A the BSZ0501NSIATMA1 dissipates roughly (Rds(on) x I^2) plus switching losses, manageable in the 3.3 x 3.3 mm footprint with 2 oz copper.
Recommended
Battery Protection / OR-ing
Battery-pack protection and OR-ing FETs require low Rds(on) at high continuous current and a small footprint; the BSZ0501NSIATMA1's 25 A TA rating and 3.3 x 3.3 mm outline fit 2-3S battery OR-ing designs. The 30 V Vds gives headroom for multi-cell packs and inductive kick-back during hot-swap events. The body diode is suitable for low-frequency switching OR-ing; for high-frequency hot-swap, drive the gate at 10 V with a soft-start circuit. The exposed drain pad bonds directly to the inner copper plane to spread heat during sustained fault-current events.
Recommended
Telecom Brick Converters
In isolated 48 V-input telecom brick converters, the BSZ0501NSIATMA1 is typically used on the secondary-side synchronous-rectifier slot following a planar transformer. While the primary-side FETs require 100 V+ ratings, the secondary 12 V rail is well served by a 30 V part with low Rds(on). The OptiMOS 5 family is specifically characterised for secondary-side rectification, with the body-diode reverse-recovery behaviour optimised for >100 kHz operation. Two BSZ0501NSIATMA1 in parallel can deliver 50 A at TA=70C with proper gate-drive symmetry and source-balancing layout.
Recommended
Low-Voltage Motor Drive
For low-voltage brushless DC (BLDC) or brushed DC motor drive in 12-24 V systems, the BSZ0501NSIATMA1 acts as the low-side switch in a half-bridge with a complementary P-channel or N-channel high-side FET. The 40 A TC rating supports motor-startup inrush up to ~80 A peak, while the 30 V rating covers 24 V industrial supplies with derating. PWM frequencies of 20-50 kHz are typical; the OptiMOS 5 gate-charge profile keeps drive losses modest. Use a gate resistor of 10-47 ohm to control ringing on long motor leads.
Recommended
Hot-Swap / In-Rush Protection
The BSZ0501NSIATMA1 is suitable for 12 V hot-swap / in-rush protection slots in servers, network switches, and industrial plug-in cards where it limits inrush current when a board is inserted into a live backplane. The 30 V Vds gives 1.5x margin above 12 V, and the 25 A continuous Id supports typical card load. The exposed drain pad handles the brief dissipation surge during the inrush-limiting phase. Drive the gate from a soft-start controller (such as the BTS70041EPZXUMA1 high-side switch) to ramp the gate voltage slowly and limit di/dt.
Recommended
USB-PD Power Path Switching
In USB-PD source applications where a 5 V / 9 V / 15 V / 20 V bus must be switched or OR-ed, the BSZ0501NSIATMA1 acts as a low-side load switch or as part of an OR-ing network between two PD sources. The 30 V rating covers 20 V PD contracts with margin, and the 25 A continuous Id supports 100 W PD output (20 V / 5 A) with appropriate thermal management. The small footprint permits placement inside the Type-C connector housing on flex PCB, and the central drain pad supports heat-spreading through inner copper layers.
Recommended
Recommended Products Summary
Engineering reference data for BSZ0501NSIATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSZ031NE2LS5ATMA1 | BSC0501NSIATMA1 | BSC0502NSIATMA1 | BSZ017NE2LS5IATMA1 | BSC028N06NSTATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same |
| Vds (Drain-Source Voltage) | 30 V | 25 V | 30 V | 30 V | 25 V | 60 V |
| Continuous Id at TA=25C | 25 A | [DATA_NEEDED: Id] | [DATA_NEEDED: Id] | [DATA_NEEDED: Id] | [DATA_NEEDED: Id] | [DATA_NEEDED: Id] |
| Power Dissipation (TA=25C) | 2.1 W | [DATA_NEEDED: Pd] | [DATA_NEEDED: Pd] | [DATA_NEEDED: Pd] | [DATA_NEEDED: Pd] | [DATA_NEEDED: Pd] |
| FET Type / Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Product Family | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Smaller footprint than D2PAK alternatives at same current rating (vs IPD025N06N)
- Lower switching losses than OptiMOS 3 generation at same Rds(on) (vs BSC0901NS (OptiMOS 3))
- 30 V rating optimised for 12 V and 19 V bus applications (vs 40 V generic MOSFETs)
Design Notes
The PG-TSDSON-8-FL package dissipates 2.1 W at TA=25C only when soldered to a copper pour of at least 25 mm squared on a 2 oz outer layer with multiple thermal vias to inner planes. Estimated: at TA=70C ambient, expect derating to ~1.2 W continuous (linear from 2.1 W at 25C to 0 W at 150C Tj). Without the recommended copper area, junction temperature will exceed 100C at full 25 A load. For higher dissipation, consider BSC0502NSIATMA1 in the same footprint but with optimised thermal path.
Place the gate-drive resistor (10-47 ohm) within 5 mm of pin 1 to dampen gate-source ringing. The source pins (2, 3, 4, 8) should be tied together with a low-inductance copper pour that returns directly to the gate-driver ground. Estimated: total source inductance above 5 nH will cause overshoot on Vgs and increase switching loss by 10-20% at >500 kHz. Use a Kelvin connection to pin 4 for the gate-driver return path if possible.
Do not exceed the 30 V Vds rating even transiently; inductor kickback in buck converters can overshoot by 20-30% during load-step transients if the snubber is undersized. The body diode of the BSZ0501NSIATMA1 is not optimised for hard commutation above 1 A/dt - in synchronous rectification the FET should always be turned on before the body diode conducts, not relied upon as a freewheeling diode. Always drive Vgs to 10 V for full enhancement; 4.5 V Vgs will leave the FET in the linear region and cause severe heating.
Keep the power loop (drain to inductor to load to source) area to a minimum - estimated inductance should stay below 5 nH for clean switching at 500 kHz. Place input bypass ceramic (22 uF X5R 25V or higher) within 3 mm of the drain pad. Use 4-oz copper or 2-oz with thermal vias on the drain pad for full 25 A continuous current. Paralleled BSZ0501NSIATMA1 devices should share source inductance symmetrically - route each source directly to the sense resistor.
Compliance Information
RoHS compliant per Infineon product page; JESD-609 code e3 (matte tin). Not AEC-Q101 qualified - choose an Infineon AEC-Q101 part for automotive designs.
