BSC0504NSIATMA1 vs BSC150N03LDGATMA1 Comparison
Detailed side-by-side comparison of BSC0504NSIATMA1 by Infineon and BSC150N03LDGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
BSC150N03LDGATMA1 β ActiveSpecification Comparison
| Parameter | BSC0504NSIATMA1 | BSC150N03LDGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.46 |
| Transistor Type | N-channel MOSFET | β |
| Drain-to-Source Voltage | 30 V | β |
| Continuous Drain Current at Ta | 21 A | β |
| Continuous Drain Current at Tc | 72 A | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 30 W | β |
| Technology Family | OptiMOS 5 | β |
| Package | PG-TDSON-8-6 | PG-TDSON-8-4 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 pins | β |
| Exposed Pad | Yes, according to distributor package description | β |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | β |
| Gate Charge | [DATA_NEEDED: gate charge] | β |
| Gate Threshold Voltage | [DATA_NEEDED: gate threshold voltage] | β |
| Thermal Resistance | [DATA_NEEDED: thermal resistance] | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | β |
| RoHS Status | unknown | Compliant |
| Lead-Free Status | unknown | β |
| Halogen-Free Status | unknown | β |
| REACH Status | unknown | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel MOSFET Array (half-bridge) |
| Drain-Source Voltage (Vds) | β | 30 V |
| Continuous Drain Current (Id) @ TA=25C | β | 20 A |
| Continuous Drain Current (Id) @ TA=70C | β | [DATA_NEEDED: Id at TA=70C] |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: Idm] |
| Gate-Source Voltage (Vgs) | β | Β±20 V |
| Gate Threshold Voltage (Vgs(th)) | β | 1.0 V to 2.5 V |
| On-State Resistance (Rds(on)) @ Vgs=10V | β | [DATA_NEEDED: typical Rds(on) mOhm] |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | β | [DATA_NEEDED: typical Rds(on) mOhm] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg nC] |
| Gate-Drain Charge (Qgd) | β | [DATA_NEEDED: typical Qgd nC] |
| Output Charge (Qoss) | β | [DATA_NEEDED: typical Qoss nC] |
| Power Dissipation (Pd) | β | 26 W |
| Operating Junction Temperature | β | -55C to +150C |
| MSL Level | β | 1 |
| Halogen-Free | β | Yes |