BSC0504NSIATMA1 vs BSC150N03LDGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0504NSIATMA1 disebabkan oleh Infineon dan BSC150N03LDGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
BSC150N03LDGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC0504NSIATMA1 | BSC150N03LDGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-channel MOSFET | — |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | — |
| Kemasan | PG-TDSON-8-6 | PG-TDSON-8-4 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| Tegangan Had Kepasaran | [DATA_NEEDED: gate threshold voltage] | — |
| Tegangan Panas | [DATA_NEEDED: thermal resistance] | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Status RoHS | unknown | Compliant |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel MOSFET Array (half-bridge) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ TA=25C | — | 20 A |
| Continuous Drain Current (Id) @ TA=70C | — | [DATA_NEEDED: Id at TA=70C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm] |
| Gate-Source Voltage (Vgs) | — | ±20 V |
| Gate Threshold Voltage (Vgs(th)) | — | 1.0 V to 2.5 V |
| On-State Resistance (Rds(on)) @ Vgs=10V | — | [DATA_NEEDED: typical Rds(on) mOhm] |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: typical Rds(on) mOhm] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg nC] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: typical Qgd nC] |
| Output Charge (Qoss) | — | [DATA_NEEDED: typical Qoss nC] |
| Power Dissipation (Pd) | — | 26 W |
| Suhu Hubungan Operasi | — | -55C to +150C |
| Aras MSL | — | 1 |
| Boson Bebas | — | Yes |