BSC0504NSIATMA1 vs BSC150N03LDGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC0504NSIATMA1 sa pamamagitan ng Infineon at BSC150N03LDGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC0504NSIATMA1 - 30V 21A N-MOSFET | Infineon | Power Switching
BSC0504NSIATMA1 ✓ NakahandaInfineon
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
BSC150N03LDGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC0504NSIATMA1 | BSC150N03LDGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-channel MOSFET | — |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | — |
| Packhaging | PG-TDSON-8-6 | PG-TDSON-8-4 (5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| Threshold na Voltage ng Gate | [DATA_NEEDED: gate threshold voltage] | — |
| Thermal Resistance | [DATA_NEEDED: thermal resistance] | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Tindminan RoHS | unknown | Compliant |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel MOSFET Array (half-bridge) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ TA=25C | — | 20 A |
| Continuous Drain Current (Id) @ TA=70C | — | [DATA_NEEDED: Id at TA=70C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm] |
| Gate-Source Voltage (Vgs) | — | ±20 V |
| Gate Threshold Voltage (Vgs(th)) | — | 1.0 V to 2.5 V |
| On-State Resistance (Rds(on)) @ Vgs=10V | — | [DATA_NEEDED: typical Rds(on) mOhm] |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: typical Rds(on) mOhm] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg nC] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: typical Qgd nC] |
| Output Charge (Qoss) | — | [DATA_NEEDED: typical Qoss nC] |
| Power Dissipation (Pd) | — | 26 W |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| Level ng MSL | — | 1 |
| Wala sa Halogen | — | Yes |