BSC052N08NS5ATMA1 vs BSC050NE2LSATMA1 Comparison
Detailed side-by-side comparison of BSC052N08NS5ATMA1 by Infineon and BSC050NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC052N08NS5ATMA1 | BSC050NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC052N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 25V (trench) |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc) | 95 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V | — |
| Total Power Dissipation (Tc) | 83 W | — |
| Total Power Dissipation (Ta) | 2.5 W | — |
| Operating Junction Temperature | -55C to +150C | — |
| Package | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 25 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 58 A |
| Continuous Drain Current (I_D) at Ta=25C | — | 39 A |
| R_DS(on) max at V_GS=10V | — | 5 mOhm |
| R_DS(on) typical at V_GS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 28 W |
| Operating Temperature Range | — | -55C to +150C |