BSC052N08NS5ATMA1 - 80V 95A 5.2mΩ OptiMOS 5 N-FET | Infineon
MPN: BSC052N08NS5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.38 | $1.38 |
| 10 | $1.2 | $12.00 |
| 100 | $0.95 | $95.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
| 5,000 | $0.52 | $2,600.00 |
Drop-in alternatives for BSC052N08NS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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BSC117N08NS5ATMA1
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View Datasheet →BSC0906NSATMA1
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View Datasheet →BSC0902NSIATMA1
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View Datasheet →BSC023N08NS5SCATMA1
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View Datasheet →BSC094N06LS5ATMA1
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View Datasheet →BSC052N08NS5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC052N08NS5ATMA1 |
| Technology | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc) | 95 A |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΩ |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V |
| Total Power Dissipation (Tc) | 83 W |
| Total Power Dissipation (Ta) | 2.5 W |
| Operating Junction Temperature | -55C to +150C |
| Package | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| MSL Level | 1 (unlimited) |
BSC052N08NS5ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (low-side reference for gate drive) |
| Pin 2 | Source — Source connection (low-side reference for gate drive) |
| Pin 3 | Source — Source connection (low-side reference for gate drive) |
| Pin 4 | Gate — Gate drive input (logic-level, VGS(th) ~2.5-3.0 V) |
| Pin 5 | Drain — Drain connection (tied to exposed pad) |
| Pin 6 | Drain — Drain connection (tied to exposed pad) |
| Pin 7 | Drain — Drain connection (tied to exposed pad) |
| Pin 8 | Drain — Drain connection (tied to exposed pad) |
Safe Operating Area (DC, Ta=25C, single pulse)
Typical Applications
BSC052N08NS5ATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, Primary-Side Switching in Telecom DC-DC Bricks, Server & Datacenter Point-of-Load Converters, Industrial Motor Drive H-Bridge, Battery Management & Hot-Swap OR-ing, Solar Inverter / MPPT Stage.
48V Telecom Synchronous Rectification
The BSC052N08NS5ATMA1 is optimized for the synchronous-rectifier (SR) position in 48 V telecom DC-DC converters where the body diode traditionally dominates switching loss. Its OptiMOS 5 cell architecture delivers 5.2 mΩ max RDS(on) at VGS=10V - approximately 44% lower than the prior OptiMOS generation - reducing I²R conduction loss at 30-50 A continuous currents. Output capacitance is reduced by up to 44%, which directly cuts switching loss at 200-500 kHz operating frequencies typical of modern isolated bus converters. With 83 W power dissipation capability and SuperSO8 thermal pad, the device can replace two paralleled older-generation MOSFETs in high-density brick designs, freeing board area and reducing BOM cost. Designers should match gate-driver rise/fall times to the gate charge (Qg) figure in the datasheet for clean switching edges.
Recommended
Primary-Side Switching in Telecom DC-DC Bricks
In isolated telecom DC-DC bricks (e.g. 36-75 V input to 12 V/5 V output), the BSC052N08NS5ATMA1 serves as the primary-side high-side and low-side switch in half-bridge or full-bridge topologies. Its 80 V VDS rating provides adequate margin for 75 V telecom transient bus voltage, while the 95 A continuous ID rating supports 500 W+ brick designs with proper thermal management. The OptiMOS 5 low Qrr (reverse-recovery charge) is critical here because hard-switched primary stages otherwise suffer from body-diode reverse-recovery loss that scales with switching frequency. Combined with a high-density gate-driver such as the IFX007TAUMA1 or 1EDI60N12AFXUMA1, this part enables switching frequencies above 300 kHz without efficiency penalty. Designers should keep the high-side gate-driver loop area minimal to suppress dv/dt-induced ringing.
Recommended
Server & Datacenter Point-of-Load Converters
The BSC052N08NS5ATMA1 fits server and datacenter 48 V-to-PoL converter topologies where high efficiency at partial load is critical for meeting 80 Plus Titanium-class standards. With RDS(on) of 5.2 mΩ and ID of 95 A, it handles 30-50 A continuous load currents typical of CPU/GPU core voltage rails with low conduction loss. The exposed SuperSO8 thermal pad enables direct PCB heatsinking through inner copper layers, allowing up to 2-3 W steady-state dissipation without external heatsinks. The OptiMOS 5 platform's low output capacitance reduces switching loss in hard-switched buck stages operating at 500 kHz to 1 MHz - critical for shrinking magnetics and increasing power density in datacenter PSUs. Low-side SR applications benefit most from the part's low Qrr.
Recommended
Industrial Motor Drive H-Bridge
The BSC052N08NS5ATMA1 serves in industrial motor drive H-bridge modules rated up to 48 V / 50 A continuous, such as BLDC drives for pumps, fans, and small servo motors. Its 80 V VDS rating covers 48 V bus with 60% safety margin for back-EMF spikes and DC-bus ringing during PWM switching. The 95 A continuous ID rating supports peak motor-start currents of 200-300 A in short bursts (pulsed drain current spec applies), enabling smaller heatsinks than competing 60 V/75 A parts. The SuperSO8 5x6 mm footprint is compatible with standard H-bridge PCB reference designs from gate-driver IC vendors like the IFX007TAUMA1. Designers should add gate-source pull-down resistors (10-100 kΩ) to prevent accidental turn-on during controller reset.
Recommended
Battery Management & Hot-Swap OR-ing
In battery management systems and -48 V telecom OR-ing / hot-swap applications, the BSC052N08NS5ATMA1 acts as the load-sharing or inrush-current-limiting switch. Its low RDS(on) of 5.2 mΩ minimizes voltage drop and dissipation in the active path - critical for parallel battery strings where voltage drop imbalance reduces capacity utilization. The 80 V VDS rating handles -48 V nominal plus full transients from battery disconnect events. The SuperSO8 footprint allows direct PCB replacement of older DPAK or D2PAK OR-ing FETs at higher current density. Designers should include a gate-drive resistor (10-100 Ω) to control turn-on dV/dt and limit inrush during hot-plug events. The part is also suitable as the reverse-polarity protection FET in 24-48 V industrial battery systems.
Recommended
Solar Inverter / MPPT Stage
In solar micro-inverters and MPPT (maximum power point tracking) boost stages, the BSC052N08NS5ATMA1 acts as the main switching element on the 40-60 V PV input side. The 80 V VDS rating accommodates open-circuit PV voltage transients up to 60 V (cold-panel Voc typically 10-15% above STC), while the 95 A ID rating supports 3-5 kW micro-inverter designs. OptiMOS 5's low Qrr reduces switching loss in the MPPT boost converter operating at 50-150 kHz, improving weighted conversion efficiency. The SuperSO8 footprint allows compact PCB layouts for DIN-rail or wall-mount micro-inverter form factors. Designers should consider the BSC023N08NS5SCATMA1 (2.3 mΩ) for higher-current >10 kW string inverter designs sharing the same footprint.
Recommended
Recommended Products Summary
Engineering reference data for BSC052N08NS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC117N08NS5ATMA1 | BSC0901NSATMA1 | BSC0906NSATMA1 | BSC0902NSIATMA1 | BSC023N08NS5SCATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8 (SuperSO8) 5x6 mm - same | PG-TDSON-8 (SuperSO8) 5x6 mm - same | PG-TDSON-8 (SuperSO8) 5x6 mm - same | PG-TDSON-8 (SuperSO8) 5x6 mm - same | PG-TDSON-8 (SuperSO8) 5x6 mm - same | PG-TDSON-8 (SuperSO8) 5x6 mm - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS (V) | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V | 60 V |
| ID continuous (Tc) | 95 A | [DATA_NEEDED] | [DATA_NEEDED] | 75 A | 75 A | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) max @ VGS=10V | 5.2 mΩ | 11.7 mΩ | 9.0 mΩ | 9.0 mΩ | 9.0 mΩ | 2.3 mΩ | 9.4 mΩ |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS | OptiMOS | OptiMOS 5 | OptiMOS 5 |
| Power Dissipation (Tc) | 83 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Operating Temperature | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C |
Key Differentiators
- Lower RDS(on) than prior OptiMOS generation (vs BSC0906NSATMA1)
- Higher continuous drain current rating (vs BSC0906NSATMA1)
- OptiMOS 5 generation with lower Qrr (vs BSC0901NSATMA1)
Design Notes
Estimated: At continuous ID = 50 A in a 48 V-to-12 V synchronous buck stage (VIN = 48 V, VDS during OFF = 36 V, conduction loss = I²R × D = 50² × 0.0052 × 0.25 = 3.25 W), the device dissipates roughly 3-4 W including switching loss. With SuperSO8 RθJA ≈ 50 C/W on 1 oz 1-square-inch copper pad, junction temperature rises 175 C above ambient - exceeding the 150 C limit. For 50 A continuous operation, use at least 2-3 square inches of copper, an internal heat-spreader layer, or upgrade to BSC023N08NS5SCATMA1 (2.3 mΩ). Always derate to maintain Tj(max) = 125 C for reliable long-term operation.
Minimize the high-side FET switching loop: keep the bootstrap-cap, gate-driver, and high-side FET drain-source loop area under 0.5 cm² to limit parasitic inductance that causes VDS overshoot and gate-drive ringing. Place a 10-100 Ω gate resistor in series with the gate-drive output to dampen oscillations. Route the gate trace as a 4-mil microstrip with adjacent ground return. For the SuperSO8 package, flood the exposed drain pad with at least 1 oz copper on top layer plus thermal vias (0.3 mm drill, 0.5 mm pitch, 4-6 vias minimum) connecting to inner ground/power planes for optimal heat dissipation.
Keep the gate-drive loop area (gate-driver output → FET gate → FET source → gate-driver ground return) physically small - ideally < 0.25 cm². Use a kelvin-source connection where the gate-driver ground ties directly to the FET source pad rather than sharing the power-ground path. This prevents source-inductance-induced gate-drive voltage collapse during fast switching edges (dv/dt > 5 V/ns typical of OptiMOS 5). For paralleled FETs, use individual gate-resistors and a balanced layout to prevent parasitic oscillation. Add 100 kΩ gate-source pull-down resistors to keep the FET off during MCU/controller reset or brown-out events.
Do not exceed the absolute maximum VGS = ±20 V - even brief transients from gate-driver stray inductance can exceed this and permanently damage the gate oxide. Add a 10-22 V TVS diode or 10 kΩ gate-source resistor if the gate driver is unbypassed. Avoid operating continuously above ID = 75 A in the SuperSO8 package without proper thermal management - the part will thermally limit at Tj = 150 C. Finally, ensure the input bus voltage never exceeds 80 V including transients; add a TVS or snubber for inductive load switching to clamp voltage spikes below 80 V.
For switching frequencies above 300 kHz, the OptiMOS 5 low Qg reduces gate-drive loss but increases susceptibility to dv/dt-induced false turn-on via the Miller gate-drain capacitance (Cgd). Mitigate by using a gate-drive supply of at least 12 V (not 10 V) for adequate margin above VGS(th), and by adding a small (10-100 Ω) gate-source resistor that forms a low-pass filter with Cgd to slow positive dV/dt transients. If ringing exceeds 30% of VDS, increase the gate resistor or add a ferrite bead in series with the gate.
Compliance Information
RoHS and REACH compliant per LCSC listing (C3288911) and Infineon product page. MSL Level 1 per Infineon SuperSO8 package qualification. Not AEC-Q100 qualified - select an automotive-grade Infineon OptiMOS 5 variant for vehicle applications.
