BSC052N08NS5ATMA1 vs BSC066N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC052N08NS5ATMA1 by Infineon and BSC066N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC052N08NS5ATMA1
BSC052N08NS5ATMA1 - 80V 95A 5.2mΩ OptiMOS 5 N-FET | Infineon
BSC052N08NS5ATMA1 ✓ ActiveInfineon
BSC066N06NSATMA1
BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΩ OptiMOS | Infineon
BSC066N06NSATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC052N08NS5ATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.49 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC052N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 5 60 V trench-gate |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (ID, Tc) | 95 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V | — |
| Total Power Dissipation (Tc) | 83 W | — |
| Total Power Dissipation (Ta) | 2.5 W | — |
| Operating Junction Temperature | -55C to +150C | -55°C to +150°C |
| Package | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-6 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | 1 |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V (typ) |
| Total Gate Charge (Qg) | — | 26 nC (typ) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |