BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΩ OptiMOS | Infineon
MPN: BSC066N06NSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.61 | $610.00 |
| 3,000 | $0.49 | $1,470.00 |
Drop-in alternatives for BSC066N06NSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSC066N06NSATMA1 Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 64 A |
| Continuous Drain Current (ID) at TC=100°C | 45 A |
| Pulsed Drain Current (IDM) | 256 A |
| Gate-Source Voltage (VGS) max | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 6.6 mΩ (max) |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) |
| Total Gate Charge (Qg) | 26 nC (typ) |
| Power Dissipation (PD) at TC=25°C | 46 W |
| Power Dissipation (PD) at TA=25°C | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | 1.3 °C/W |
| Operating Junction Temperature | -55°C to +150°C |
| Package | PG-TDSON-8-6 (TDSON EP) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Technology | OptiMOS 5 60 V trench-gate |
BSC066N06NSATMA1 Pin Configuration
| Pin 1 | Source — Source connection (kelvin) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Drain — Drain connection (also exposed pad) |
Safe Operating Area
Typical Applications
BSC066N06NSATMA1 is suitable for 6 applications: 48V Telecom Intermediate Bus Converter, Server VRM Point-of-Load Converter, eBike and Power Tool Motor Drive, Battery Management System (BMS) Switch, Hot-Swap and OR-ing Controller, Solar Micro-Inverter and MPPT Stage.
48V Telecom Intermediate Bus Converter
The BSC066N06NSATMA1 fits 48 V telecom intermediate bus converters (IBC) because its 60 V VDS rating provides a 25% derating margin above the 48 V nominal, sufficient to absorb transient spikes during load steps and input surges. Its 6.6 mΩ RDS(on) at VGS=10 V keeps synchronous-rectifier conduction loss low - at 30 A the part dissipates about 6 W versus 8 W for a 9 mΩ alternative. The TDSON-8-6 exposed-pad package couples directly to a top-side copper pour, achieving RθJC of 1.3 °C/W and supporting 46 W continuous dissipation. Compared with planar MOSFETs, the OptiMOS 5 trench-gate process also delivers lower Qg, which reduces switching loss at 100-200 kHz switching frequencies typical in IBC designs.
Recommended
Server VRM Point-of-Load Converter
The BSC066N06NSATMA1 is well-matched to server VRM point-of-load (POL) converters delivering 1.0 V to 3.3 V rails at 25-40 A from a 12 V intermediate bus. The 6.6 mΩ RDS(on) keeps high-side and low-side conduction loss around 50-80 mW per MOSFET at 30 A, supporting multi-phase VR topologies where efficiency at partial load is critical. The logic-level gate threshold (typ. 1.7 V) enables direct drive from multiphase PWM controllers such as IR35201 or ISL95808, eliminating dedicated gate drivers. The exposed-pad package also aids PCB-top thermal dissipation in compact server mezzanine cards where bottom-side cooling is unavailable.
Recommended
eBike and Power Tool Motor Drive
In eBike controller and cordless power tool drives, the BSC066N06NSATMA1 serves as the low-side or high-side switch in a 3-phase bridge, leveraging its 64 A continuous rating at TC=25°C to handle peak motor currents of 30-40 A without thermal derating. The 60 V VDS rating is sufficient for 36 V and 48 V battery packs, leaving headroom for back-EMF spikes up to 2x battery voltage during regenerative braking. The 6.6 mΩ RDS(on) keeps conduction loss under 5 W per MOSFET at peak current, allowing air-cooled designs without a heatsink. The TDSON-8-6 package also withstands the vibration and thermal-cycling stresses of mobile applications, with an operating temperature range of -55°C to +150°C.
Recommended
Battery Management System (BMS) Switch
The BSC066N06NSATMA1 is suitable as a charge/discharge MOSFET in lithium-ion battery management systems for 24 V-48 V packs, including e-mobility and stationary energy storage applications. Its 6.6 mΩ RDS(on) at full enhancement keeps full-load conduction loss below 8 W at 35 A continuous - critical for reducing total system heat in sealed enclosures. The 60 V VDS rating provides adequate margin above a fully-charged 48 V pack (54.6 V), while the ±20 V VGS rating tolerates the gate transients typical in half-bridge topologies. Bidirectional current capability also makes it useful as a reverse-polarity protection switch or a battery-isolation FET.
Recommended
Hot-Swap and OR-ing Controller
In hot-swap and OR-ing applications for redundant -48 V or 12 V power architectures, the BSC066N06NSATMA1 functions as the series pass element, with its 60 V VDS comfortably derating 48 V rails and its 64 A continuous rating handling full load during input transients. The low RDS(on) reduces steady-state power dissipation during normal operation, while the wide SOA handles inrush current events when downstream bulk capacitors charge. The logic-level gate threshold allows direct drive from hot-swap controllers without level-shifting circuits. Compared with planar MOSFETs of equivalent die, the OptiMOS 5 process also provides faster switching, improving the speed of OR-ing turn-off to minimize reverse-current flow when a failed source is disconnected.
Recommended
Solar Micro-Inverter and MPPT Stage
The BSC066N06NSATMA1 is appropriate for the synchronous-rectifier stage in solar micro-inverters and MPPT converters operating from 30-50 V PV input. The 60 V VDS gives adequate margin above the 50 V maximum-power-point range, including transient spikes from grid-side events. The 6.6 mΩ RDS(on) keeps conduction loss below 2% at 30 A, supporting peak efficiencies above 97% for the DC-DC stage. The TDSON-8-6 package handles the outdoor temperature swings of -40°C to +125°C at the inverter enclosure. The wide SOA also tolerates the body-diode conduction cycles during MPPT sweep operation, which is critical for converter reliability.
Recommended
Recommended Products Summary
Engineering reference data for BSC066N06NSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0906NSATMA1 | BSC0901NSATMA1 | BSC0902NSIATMA1 | BSC016N06NSATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-6 | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| RDS(on) at VGS=10V | 6.6 mΩ | 9 mΩ | 9 mΩ | 9 mΩ | 1.6 mΩ | 7.6 mΩ |
| Continuous Drain Current (TC=25°C) | 64 A | 70 A | 70 A | 70 A | 100 A | 50 A |
| Total Gate Charge (Qg) | 26 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Gate Threshold Voltage (typ) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| Thermal Resistance RθJC | 1.3 °C/W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology / Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 |
| Approx Unit Price (qty-1) | $1.42 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lower RDS(on) than direct alternative BSC0906NSATMA1 (vs BSC0906NSATMA1)
- Same package as higher-current BSC016N06NSATMA1 for design reuse (vs BSC016N06NSATMA1)
- OptiMOS 5 process improves switching FOM over older OptiMOS 3 (vs BSC076N06NS3GATMA1)
- Higher VDS margin than 40 V OptiMOS alternatives (vs BSC052N08NS5ATMA1 (80 V variant))
Design Notes
The PG-TDSON-8-6 package requires a top-side thermal copper pour tied to the exposed drain pad (pin 8). At 30 A continuous drain current and RDS(on)=6.6 mΩ, conduction loss is approximately 6 W. Estimated: assuming a 1 square-inch copper pour with thermal resistance of 30 °C/W and 25°C ambient, junction temperature rise is roughly 180°C - exceeding the 150°C rating. Derate to 20 A continuous or use a 2-3 square-inch pour plus forced airflow to maintain reliable operation.
Minimize the gate-drive loop inductance by routing the gate drive return path directly to the source pins (pins 1-3, 5-7) closest to the gate pin (pin 4). Place a 10 Ω gate resistor in series and a 10 kΩ pull-down on the gate to prevent inadvertent turn-on during supply transients. Keep the high-dV/dt drain node trace short and isolated from the gate trace to avoid Miller-induced turn-on.
Do not exceed the ±20 V VGS maximum. The BSC066N06NSATMA1 has a relatively low VGS(max) compared with some competitors (typically ±30 V). Verify that any 12 V gate drive transients from long gate-drive traces stay below ±20 V, and add a gate-source Zener clamp of 16-18 V if your driver has high dV/dt. Also confirm the drain tab is soldered to the PCB pour; an unsoldered exposed pad doubles the junction-to-ambient thermal resistance.
For best efficiency use 10 V gate drive, not 4.5 V logic-level drive. While the threshold is 1.7 V, RDS(on) at VGS=4.5 V is roughly 2-3× higher than at VGS=10 V due to incomplete channel formation in the trench. For synchronous-rectifier applications above 100 kHz, a dedicated gate driver such as IRS21271 or ISL2110 is recommended over direct microcontroller drive to achieve clean edges and reduce switching loss.
In half-bridge or synchronous buck topologies, the body diode of the low-side MOSFET conducts during dead-time intervals. The OptiMOS 5 process features a fast body diode with reverse-recovery time in the 30-50 ns range, but at high dV/dt the diode can still inject displacement current into the gate via the Miller capacitance Cgd. Use a minimum 20 ns dead-time and consider adding a Schottky diode in parallel with the low-side MOSFET for very high-frequency designs (>300 kHz).
Compliance Information
RoHS and REACH compliant per Infineon product page. The standard BSC066N06NSATMA1 is not AEC-Q100 qualified - for automotive applications, request the BSC066N06NSATMA1-Q1 variant from Infineon.
