BSC059N04LS6ATMA1 vs BSC032N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC059N04LS6ATMA1 by Infineon and BSC032N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC059N04LS6ATMA1
BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon
BSC059N04LS6ATMA1 β ActiveInfineon
BSC032N04LSATMA1
BSC032N04LSATMA1 - 40V 3.2mΞ© OptiMOS 5 N-MOSFET | Infineon
BSC032N04LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC059N04LS6ATMA1 | BSC032N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.32 |
| Technology | OptiMOS 6 (N-channel MOSFET) | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 17 A | β |
| Continuous Drain Current (ID) at TC=25C | 49 A | β |
| Pulsed Drain Current (ID,pulse) at TC=25C | 59 A | β |
| On-Resistance RDS(on) max | 5.9 mOhm at VGS=10 V | β |
| Total Power Dissipation at TA=25C | 3 W | β |
| Total Power Dissipation at TC=25C | 38 W | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Diode Continuous Forward Current (IS) | 38 A at TC=25C | β |
| Diode Pulse Current (IS,pulse) | 236 A at TC=25C | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | β | Infineon Technologies |
| Part Series | β | OptiMOS 5 40V |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 21 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 98 A |
| RDS(on) max at VGS=10V | β | 3.2 mΞ© |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 52 W |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |