BSC0902NSIATMA1 vs BSP88H6327XTSA1 Comparison

Detailed side-by-side comparison of BSC0902NSIATMA1 by Infineon and BSP88H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC0902NSIATMA1 BSP88H6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS 30V —
Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TA=25C 23 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-State Resistance RDS(on) Max at VGS=10V 2.8 mOhm —
Gate Charge QG(0V..10V) 24 nC —
Output Charge QOSS 17 nC —
Power Dissipation (TA) 2.5 W —
Power Dissipation (TC) 48 W —
Operating Temperature Range -55C to +150C (junction) —
Package PG-TDSON-8-6 (TDSON-8) PG-SOT223-4 (SOT-223-3)
Mounting Type Surface Mount Surface Mount
Built-in Diode Yes (single with built-in diode) —
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS Status Compliant —
Lead-Free Yes —
Halogen Free Yes —
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) — 350 mA at Ta=25 C
Power Dissipation (PD) — 1.8 W at Ta=25 C
On-State Resistance (RDS(on)) — 6 ohm typical at VGS=10 V
Configuration — Single
Operating Temperature — -55 C to +150 C
Technology — SIPMOS (planar enhancement mode)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
RoHS Compliance — Compliant
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Drain Tab Connection — SOT-223 tab is drain

Datasheets & Resources

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