BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
MPN: BSC0902NSIATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.69 | $6.90 |
| 100 | $0.55 | $55.00 |
| 500 | $0.46 | $230.00 |
| 1,000 | $0.39 | $390.00 |
| 3,000 | $0.32 | $960.00 |
Drop-in alternatives for BSC0902NSIATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC0901NSIATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC0902NSI
✅ Drop-In📋 Reference alternative (not in catalog)
BSC094N06LS5ATMA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →IPD060N03LGATMA1
✅ Drop-In✓ In Stock
$0.2 / Unit
View Datasheet →BSP88H6327XTSA1
✅ Drop-In✓ In Stock
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View Datasheet →BSC0902NSIATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 30V |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) at TA=25C | 23 A |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm |
| Gate Charge QG(0V..10V) | 24 nC |
| Output Charge QOSS | 17 nC |
| Power Dissipation (TA) | 2.5 W |
| Power Dissipation (TC) | 48 W |
| Operating Temperature Range | -55C to +150C (junction) |
| Package | PG-TDSON-8-6 (TDSON-8) |
| Mounting Type | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Halogen-Free | Yes |
BSC0902NSIATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source (main, high current) |
| Pin 3 | S — Kelvin source (for gate-drive return) |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | D — Drain tab (pin, also exposed pad) |
| Pin 6 | D — Drain tab (pin) |
| Pin 7 | D — Drain tab (pin) |
| Pin 8 | D — Drain tab (pin) |
Safe Operating Area
Typical Applications
BSC0902NSIATMA1 is suitable for 6 applications: Server and Datacom VRM, Telecom Point-of-Load (POL) Regulator, Hot-Swap and OR-ing Switch, Motor Drive Half-Bridge, Battery Protection and BMS, DC-DC Module and POL Brick.
Server and Datacom VRM
The BSC0902NSIATMA1 is designed for synchronous buck stages in server and datacom voltage regulator modules (VRMs) converting 12V bus to 1V-3.3V core rails. Its 2.8 mOhm RDS(on) at VGS=10V minimizes conduction loss at high output current, while the 24 nC total gate charge enables switching frequencies above 500 kHz to shrink magnetics. The 100A TC-rated continuous current supports multi-phase VRM topologies where each phase handles 30-40A. The 30V VDS provides ample margin for 12V rails with load-step transients. Compared to older trench MOSFETs, the OptiMOS 30V process improves light-load efficiency through reduced QOSS of 17 nC.
Recommended
Telecom Point-of-Load (POL) Regulator
POL regulators in telecom base-station and router systems benefit from the BSC0902NSIATMA1's combination of low RDS(on) and small PG-TDSON-8-6 footprint. The 30V VDS rating suits 12V and 18V intermediate bus architectures common in AdvancedTCA and ATX-style power systems. With 23A continuous drain current at TA=25C, the device can deliver full POL output without paralleling in sub-100W modules. Designers should use 4-layer PCBs with 2 oz copper on the drain tab to achieve full 100A TC rating in production layouts. The low QOSS improves hold-up time during input voltage sags.
Recommended
Hot-Swap and OR-ing Switch
The BSC0902NSIATMA1 is well suited for 12V hot-swap and OR-ing applications in redundant power distribution. Its 30V VDS rating handles 12V nominal with full transient margin, while the 2.8 mOhm RDS(on) keeps OR-ing conduction loss under 1W at 20A per FET. The fast switching capability supports active current-sharing loops with sub-microsecond response. The PG-TDSON-8-6 package's exposed drain pad enables direct PCB heatsinking through the OR-ing land pattern, eliminating external heatsinks in dense backplane designs. The built-in body diode provides natural freewheeling during plug-in events.
Recommended
Motor Drive Half-Bridge
Low-voltage brushless DC (BLDC) motor drives in 12V-24V battery-powered systems use the BSC0902NSIATMA1 as the low-side and high-side switch in half-bridge configurations. Its 100A pulsed current rating handles motor stall and start-up surges, while the 24 nC QG keeps gate-drive losses manageable at 25-50 kHz PWM frequencies. The body diode supports synchronous rectification during PWM deadtime without external freewheeling diodes. For 3-phase BLDC drives, three half-bridges can be built with six BSC0902NSIATMA1 devices, providing 600W drive capability at 24V. PCB layout must minimize high-side-low-side gate-drive crosstalk.
Recommended
Battery Protection and BMS
Lithium-ion battery management systems (BMS) use the BSC0902NSIATMA1 as a low-side protection FET in 4S-8S battery packs operating at 12V-30V. The 2.8 mOhm RDS(on) keeps voltage drop under 50 mV at 20A discharge, preserving battery capacity and reducing thermal stress. The 30V VDS rating accommodates fully-charged 8S Li-ion packs (33.6V max) - designers should select a 40V part for margin. The fast body diode enables bidirectional current sensing for coulomb counting. The compact PG-TDSON-8-6 footprint allows protection circuits to fit in cell-level BMS modules.
Recommended
DC-DC Module and POL Brick
Isolated and non-isolated DC-DC modules (brick converters) in the 12V-to-1V to 12V-to-12V range benefit from the BSC0902NSIATMA1's combination of high current capability and small footprint. As the synchronous rectifier FET on the secondary side of a 12V-input bus converter, it reduces secondary-side conduction loss compared to Schottky diodes, increasing module efficiency by 2-4 percent. The 100A TC rating supports 200-300W output bricks in a single FET position. The low QOSS improves no-load input current compliance with energy-star and 80 PLUS requirements.
Recommended
Recommended Products Summary
Engineering reference data for BSC0902NSIATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0901NSIATMA1 | BSC0902NSI | BSC094N06LS5ATMA1 | IPD060N03LGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-6 | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same |
| Drain-Source Voltage (VDS) Max | 30 V | 30 V | 30 V | 60 V | 30 V |
| Continuous Drain Current (TA=25C) | 23 A | 23 A | 23 A | [DATA_NEEDED] | [DATA_NEEDED] |
| Continuous Drain Current (TC=25C) | 100 A | 100 A | 100 A | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) Max at VGS=10V | 2.8 mOhm | 4.5 mOhm | 2.8 mOhm | 9.4 mOhm | 6.0 mOhm |
| Total Gate Charge QG(0V..10V) | 24 nC | [DATA_NEEDED] | 24 nC | [DATA_NEEDED] | [DATA_NEEDED] |
| Output Charge QOSS | 17 nC | [DATA_NEEDED] | 17 nC | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (TC=25C) | 48 W | [DATA_NEEDED] | 48 W | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Industry-leading FOM at 30V (vs BSC0901NSIATMA1)
- Wide voltage margin in 30V class (vs BSC094N06LS5ATMA1)
- Logic-level drive option (vs IPD060N03LGATMA1)
Design Notes
Estimated: at VDS=12V, ID=20A, and RDS(on)=2.8 mOhm, conduction loss is approximately P = I^2 x RDS(on) = 20^2 x 0.0028 = 1.12W. Switching losses depend on frequency but at 500 kHz with QG=24 nC and 12V gate drive, gate loss is ~0.14W. Total dissipation ~1.3W, well below the 2.5W TA rating. For full 100A TC operation, mount the drain tab on minimum 1 square inch of 2 oz copper with thermal vias to internal ground planes. Use junction-to-ambient thermal resistance curves in the datasheet to validate your PCB layout before committing to production.
Keep the gate-drive loop area minimal - route the gate trace directly from the driver output to pin 1, with the gate-return path on pin 3 (Kelvin source) directly back to the driver ground. Do NOT use pin 2 as the gate-return because it carries the full 100A load current and will inject switching transients into the gate-drive waveform. Place a 10-100 Ohm gate resistor within 5mm of the gate pin to dampen parasitic ringing from the gate inductance.
Do not exceed the VGS maximum rating (typically +/-20V for OptiMOS 30V family) - gate overstress destroys the thin gate oxide permanently. Use a gate-drive voltage of 10V for full RDS(on) specification; lower voltages such as 4.5V (logic-level) will increase RDS(on) by 50-100%. For bidirectional current sensing in BMS applications, account for the body diode forward drop (~0.7V) in your current-shunt amplifier design - the built-in diode is not a Schottky and has significant reverse-recovery charge.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial/commercial grade part; automotive applications should select the equivalent AEC-Q100 variant if available.
