BSC093N15NS5ATMA1 vs BSC093N15NS5 Comparison

Detailed side-by-side comparison of BSC093N15NS5ATMA1 by Infineon and BSC093N15NS5 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC093N15NS5ATMA1 BSC093N15NS5
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.83 $0.68
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 5 150V OptiMOS™ 5
FET Type N-Channel —
Drain-Source Voltage (VDS) Max 150 V —
Continuous Drain Current (ID) at TC 87 A —
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V 9.3 mΩ —
Power Dissipation (PD) at TC 139 W —
Package SuperSO8 5x6 (PG-TDSON-8-7) PG-TDSON-8-7 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Gate Drive Voltage (VGS) Recommended 10 V —
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55C to +150C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] [DATA_NEEDED: Qg typical value]
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] —
Halogen Free [DATA_NEEDED: halogen free status] —
Part Number — BSC093N15NS5
Polarity — N-Channel
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at Tc — 87 A
On-Resistance RDS(on) max at VGS=10V — 9.3 mOhm
Power Dissipation (Tc) — 139 W
AEC-Q100 Automotive Qualified — Not qualified (standard grade)

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