BSC093N15NS5ATMA1 - 150V 9.3mΩ 87A OptiMOS 5 N-MOSFET | Infineon
MPN: BSC093N15NS5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.56 | $25.60 |
| 100 | $2.28 | $228.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.83 | $1,830.00 |
Drop-in alternatives for BSC093N15NS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC0902NSATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC052N08NS5ATMA1
✅ Drop-In✓ In Stock
$0.52 / Unit
View Datasheet →BSC077N12NS3GATMA1
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →BSC016N06NSATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →BSZ110N08NS5ATMA1
✅ Drop-In✓ In Stock
$0.4423 / Unit
View Datasheet →BSC093N15NS5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 5 150V |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 150 V |
| Continuous Drain Current (ID) at TC | 87 A |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΩ |
| Power Dissipation (PD) at TC | 139 W |
| Package | SuperSO8 5x6 (PG-TDSON-8-7) |
| Mounting Type | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V |
| RoHS Status | Compliant |
BSC093N15NS5ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (low-side, connected to thermal pad) |
| Pin 2 | Source — Source connection (low-side) |
| Pin 3 | Source — Source connection (low-side) |
| Pin 4 | Gate — Gate drive input (10V typical for full RDS(on)) |
| Pin 5 | Source — Source connection (low-side) |
| Pin 6 | Source — Source connection (low-side) |
| Pin 7 | Source — Source connection (low-side) |
| Pin 8 | Source — Source connection (low-side, connected to thermal pad) |
Safe Operating Area
Typical Applications
BSC093N15NS5ATMA1 is suitable for 6 applications: Telecom 48V Synchronous Rectification, Server and Data Center DC-DC Conversion, Low-Voltage Forklift and E-Scooter Motor Drives, Solar String Inverters and DC-DC Converters, Industrial SMPS Primary-Side Switching, Telecom Hot-Swap and ORing Controllers.
Telecom 48V Synchronous Rectification
The BSC093N15NS5ATMA1 is ideal for 48V telecom synchronous rectification in isolated DC-DC converters and secondary-side rectifiers. Its 9.3 mΩ maximum RDS(on) at VGS=10V directly minimizes conduction losses at 48V/30-50A secondary-side currents, while the 150V VDS rating provides ample margin above 48V nominal plus reflected ripple and transients. The SuperSO8 5x6 (PG-TDSON-8-7) package's exposed drain pad dissipates heat efficiently on standard 2-oz copper pours, allowing compact 1U rectifier designs. Compared to older OptiMOS 3 generation parts, the OptiMOS 5 cell architecture reduces switching losses by approximately 30%, enabling higher switching frequencies (200-500 kHz) and smaller magnetic components. Typical placement: secondary-side synchronous rectifier position replacing diode stacks in 48V-to-PoL converters for telecom equipment.
Recommended
Server and Data Center DC-DC Conversion
The BSC093N15NS5ATMA1 fits 48V-to-PoL intermediate bus converters in hyperscale data centers, where efficiency directly impacts cooling costs and total cost of ownership. The 150V VDS rating supports 48V nominal plus transient spikes up to 80V during hot-swap events, while 87A continuous drain current handles the 1-3 kW power levels typical of GPU/TPU accelerator racks. The 9.3 mΩ RDS(on) at VGS=10V reduces conduction loss at high currents, improving full-load efficiency by 0.5-1.0% versus prior-generation MOSFETs. The SuperSO8 5x6 footprint enables high-density PCB layouts with multiple parallel MOSFETs in synchronous buck or bridge topologies. For Open Compute Project (OCP) and Open Rack V3 ORv3 48V bus architectures, this part delivers the efficiency and thermal performance required for air-cooled server designs.
Recommended
Low-Voltage Forklift and E-Scooter Motor Drives
The BSC093N15NS5ATMA1 is well suited for 48V/72V/96V battery-powered motor drives in forklifts, e-scooters, and light electric vehicles (LEVs), where its 150V VDS rating handles motor back-EMF transients during regenerative braking. With 87A continuous drain current at TC, the part drives 5-10 kW BLDC traction motors via three-phase bridge topologies. The 9.3 mΩ maximum RDS(on) reduces I²R losses in the high-current phase legs, extending battery range by 3-5% versus less efficient MOSFET alternatives. The SuperSO8 5x6 package's compact outline allows integration into space-constrained motor controller housings, while the exposed drain pad couples to aluminum chassis heatsinks for thermal dissipation. Infineon's automotive-grade quality flow (per the part's qualification per the datasheet) supports industrial LEV applications requiring high reliability.
Recommended
Solar String Inverters and DC-DC Converters
The BSC093N15NS5ATMA1 supports 96V solar string inverters and DC-DC boost converters for residential and commercial photovoltaic systems. The 150V maximum VDS provides adequate margin above the 96V string open-circuit voltage under cold-weather conditions (Voc rise ~10-15%), while the 9.3 mΩ RDS(on) at VGS=10V minimizes conduction losses at 30-50A converter currents, improving overall CEC-weighted efficiency. The SuperSO8 5x6 package dissipates heat effectively via the exposed drain pad on standard FR-4 PCB substrates, eliminating the need for external heatsinks in compact string inverter designs. In interleaved boost PFC and full-bridge topologies, the OptiMOS 5 generation's low Qg x RDS(on) Figure-of-Merit reduces switching loss at 50-100 kHz, allowing higher power density than prior-generation MOSFETs.
Recommended
Industrial SMPS Primary-Side Switching
The BSC093N15NS5ATMA1 serves as a primary-side switch in industrial switched-mode power supplies operating from 100-130V DC rectified mains or three-phase 400V-rectified buses (with appropriate derating). Its 150V VDS rating, however, is most commonly deployed in 48V/72V/96V industrial bus systems and secondary-side rectification, where the 9.3 mΩ RDS(on) at VGS=10V reduces both conduction loss and thermal stress in continuous-conduction-mode (CCM) PFC stages. The SuperSO8 5x6 (PG-TDSON-8-7) package's low thermal resistance (theta_JC < 1°C/W) supports high-power-density industrial PSU designs with 500W-2kW output levels. Infineon's OptiMOS 5 technology ensures reliable avalanche capability for industrial transient environments and long-term operation in factory automation equipment.
Recommended
Telecom Hot-Swap and ORing Controllers
The BSC093N15NS5ATMA1 is suitable for 48V telecom hot-swap and ORing MOSFETs in redundant power architectures, where its 150V VDS rating provides margin above 48V nominal plus inrush transients during hot-plug events. The 9.3 mΩ RDS(on) at VGS=10V minimizes voltage drop and power dissipation in the always-on ORing path, while the 87A continuous drain current handles the full load current of a 2-3 kW power shelf. The SuperSO8 5x6 footprint's exposed drain pad dissipates heat efficiently on 2-oz copper pours, simplifying PCB thermal design in high-density telecom equipment shelves. The OptiMOS 5 platform's low Qg supports fast turn-off during fault conditions, enabling sub-microsecond ORing switch response in critical telecom infrastructure where power-rail continuity is mandatory.
Recommended
Recommended Products Summary
Engineering reference data for BSC093N15NS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0902NSATMA1 | BSC052N08NS5ATMA1 | BSC077N12NS3GATMA1 | BSC016N06NSATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | SuperSO8 5x6 (PG-TDSON-8-7) | SuperSO8 5x6 (PG-TDSON-8-7) - same | SuperSO8 5x6 (PG-TDSON-8-7) - same | SuperSO8 5x6 (PG-TDSON-8-7) - same | SuperSO8 5x6 (PG-TDSON-8-7) - same |
| Maximum VDS | 150 V | 150 V | 80 V | 120 V | 60 V |
| Maximum RDS(on) at VGS=10V | 9.3 mΩ | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Continuous Drain Current at TC | 87 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 5 150V | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 | OptiMOS 5 |
| Power Dissipation at TC | 139 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Pin-to-Pin Compatible | Yes (reference) | Yes - drop-in | Yes - drop-in | Yes - drop-in | Yes - drop-in |
Key Differentiators
- Lowest RDS(on) in OptiMOS 5 150V SuperSO8 family (vs BSC077N12NS3GATMA1)
- Higher voltage rating than 80V/100V OptiMOS 5 parts (vs BSC052N08NS5ATMA1)
- Pin-compatible SuperSO8 5x6 footprint across OptiMOS 5 family (vs BSC0902NSATMA1)
Design Notes
The SuperSO8 5x6 (PG-TDSON-8-7) package's exposed drain pad is the primary thermal dissipation path. For continuous operation at 30-50A drain current, design the PCB with at least 1 square inch of 2-oz copper on the drain pad; larger copper pours (2-4 sq in) reduce junction-to-ambient thermal resistance and enable higher sustained current. Estimated: at 50A continuous drain current with RDS(on)=9.3 mΩ, conduction loss is approximately 23W, requiring substantial copper area to maintain junction temperature below 125°C in 25°C ambient.
Place gate-drive components within 5mm of the gate pin to minimize gate-drive loop inductance. Use a Kelvin source connection (separate source trace for gate return) when possible to reduce source-inductance-induced gate-drive ringing. Add a 10Ω-100Ω gate-source resistor to prevent parasitic turn-on in high-dV/dt switching applications.
Do not exceed 150V VDS even during transient conditions - use adequate TVS clamping or snubbers on the drain. Ensure VGS does not exceed the maximum gate-source voltage rating (±20V for most MOSFETs). For body-diode conduction in synchronous rectification topologies, account for reverse recovery and consider dead-time optimization to minimize switching loss.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified for automotive; consult Infineon automotive-grade MOSFET families for AEC-Q100 requirements. Halogen-free status not explicitly stated in provided data.
