BSC094N06LS5ATMA1 vs BSC010NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSC094N06LS5ATMA1 by Infineon and BSC010NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC094N06LS5ATMA1
BSC094N06LS5ATMA1 - 60V 9.4mΞ© 47A N-Channel OptiMOS 5 | Infineon
BSC094N06LS5ATMA1 β ActiveInfineon
BSC010NE2LSIATMA1
BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon
BSC010NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC094N06LS5ATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC094N06LS5ATMA1 | β |
| Technology | OptiMOSβ’ 5 (logic-level) | OptiMOS (Trench) |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 47 A | β |
| Continuous Drain Current (ID) at TC=100Β°C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| RDS(on) max at VGS=10 V | 9.4 mΞ© | β |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Power Dissipation (PD) at TC=25Β°C | 36 W | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-7 (TDSON-8 EP) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Series / Family | β | OptiMOS 25V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (ID) at TA | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 96 W |
| Configuration | β | Single N-Channel |
| Operating Temperature Range | β | -55C to +150C (TJ) |
| Pin Count | β | 8 |
| Gate Drive | β | Logic-level compatible |
| Rds(on) at 10V | β | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | β | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |