BSC094N06LS5ATMA1 - 60V 9.4mΩ 47A N-Channel OptiMOS 5 | Infineon
MPN: BSC094N06LS5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.12 | $1.12 |
| 10 | $0.95 | $9.50 |
| 100 | $0.74 | $74.00 |
| 500 | $0.58 | $290.00 |
| 1,000 | $0.46 | $460.00 |
| 5,000 | $0.38 | $1,900.00 |
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View Datasheet →BSC094N06LS5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC094N06LS5ATMA1 |
| Technology | OptiMOS™ 5 (logic-level) |
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 47 A |
| RDS(on) max at VGS=10 V | 9.4 mΩ |
| Power Dissipation (PD) at TC=25°C | 36 W |
| Operating Junction Temperature | -55 °C to +150 °C |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
BSC094N06LS5ATMA1 Pin Configuration
| Pin 1 | SOURCE — Source connection (also tied to exposed pad region) |
| Pin 2 | SOURCE — Source connection |
| Pin 3 | SOURCE — Source connection |
| Pin 4 | GATE — Gate drive input (logic-level, 4.5 V enhancement) |
| Pin 5 | DRAIN — Drain connection (high-voltage) |
| Pin 6 | DRAIN — Drain connection |
| Pin 7 | DRAIN — Drain connection |
| Pin 8 | DRAIN — Drain connection |
Safe Operating Area (DC)
Typical Applications
BSC094N06LS5ATMA1 is suitable for 7 applications: 48 V Telecom Synchronous Rectification, USB-PD / Quick-Charge Adapter Output Stage, Wireless-Charging Resonant Converter, Industrial 24 V Brushed DC Motor Drive, Server / Datacenter Point-of-Load Buck Converter, Battery-Management Load Switch & Protection, Automotive 12 V ECU Power Switching.
48 V Telecom Synchronous Rectification
The BSC094N06LS5ATMA1 fits 48 V telecom synchronous-rectification stages because its 60 V VDS rating gives >20 % margin above the 48 V nominal bus while its 9.4 mΩ RDS(on) at VGS=10 V directly cuts conduction loss on the secondary side. Used as the low-side MOSFET in a half-bridge driven from a 4.5 V logic-level PWM controller, the part's low Qg (OptiMOS 5 FOM) supports switching frequencies above 300 kHz, enabling smaller magnetics. Compared with a Schottky rectifier the BSC094N06LS5ATMA1 typically reduces rectifier loss by 50–70 % in 48 V isolated bus converters.
Recommended
USB-PD / Quick-Charge Adapter Output Stage
In USB-Power-Delivery and Qualcomm Quick-Charge adapters, the BSC094N06LS5ATMA1 serves as the synchronous-rectifier MOSFET on the secondary side of the flyback. Its 4.5 V logic-level VGS drive allows direct gate control from common secondary-side SR controllers without a charge pump, and the 9.4 mΩ RDS(on) keeps rectifier conduction loss below 0.5 W at 5 A/20 V output. The SuperSO8 5x6 footprint provides ~1 °C/W RthJC, enabling adapter designs that meet 90+ % efficiency at 65 W output without external heatsinking.
Recommended
Wireless-Charging Resonant Converter
The BSC094N06LS5ATMA1 is a strong fit for wireless-charging resonant half-bridge and full-bridge converters thanks to its low Qrr body-diode behavior and 4.5 V VGS logic-level drive. The OptiMOS 5 process minimizes reverse-recovery charge so dead-time can be shortened to <50 ns, reducing body-diode conduction loss in 100–200 kHz Qi-class transmitters. Its 60 V VDS provides comfortable margin above the 19 V input rail typical of USB-PD-powered wireless-charging bases, and the SuperSO8 5x6 footprint supports top-side cooling.
Recommended
Industrial 24 V Brushed DC Motor Drive
The BSC094N06LS5ATMA1 functions as the low-side switch in 24 V brushed-DC motor H-bridges for industrial automation. Its 60 V VDS gives a 2.5× safety margin over the 24 V bus including back-EMF spikes during PWM switching, and 9.4 mΩ RDS(on) keeps I²R loss low at the 5–10 A currents typical of small stepper or gearmotor loads. Logic-level 4.5 V VGS drive allows direct MCU GPIO control with a small gate resistor, simplifying the BOM. The SuperSO8 5x6 footprint is thermally adequate for 2–3 A continuous without a heatsink on 2 oz copper.
Recommended
Server / Datacenter Point-of-Load Buck Converter
The BSC094N06LS5ATMA1 can be used as the synchronous-rectifier (low-side) MOSFET in 12 V-input point-of-load buck converters that feed server CPUs and DDR memory rails at 0.8–3.3 V. Its low FOM (RDS(on) × Qg) cuts switching loss at 500 kHz–1 MHz switching frequencies typical of POL designs, and the SuperSO8 5x6 footprint supports the small PCB area required in dense VRM arrays. 60 V VDS easily accommodates 12 V rails with margin for transient spikes during load steps.
Recommended
Battery-Management Load Switch & Protection
The BSC094N06LS5ATMA1 is appropriate as a 12 V battery-pack load-disconnect switch in cordless power tools, e-bikes, and small UPS systems. Its 60 V VDS gives comfortable margin on 12 V Li-ion packs, and 9.4 mΩ RDS(on) limits continuous conduction loss to <1 W at 10 A discharge. Logic-level 4.5 V VGS drive allows direct BMS-MCU gate control, and the low-leakage OptiMOS 5 process preserves battery standby life. A simple RC snubber across drain-source protects against inductive kick from the load.
Recommended
Automotive 12 V ECU Power Switching
The BSC094N06LS5ATMA1 suits automotive 12 V ECU power switching where the 60 V VDS rating handles load-dump transients up to ~35 V per ISO 7637-2, and the 9.4 mΩ RDS(on) limits I²R loss in always-on power-rail gating. While not itself AEC-Q100 qualified, it is widely used in non-safety automotive subsystems such as infotainment and lighting drivers. The SuperSO8 5x6 footprint supports top-cooled PCB layouts with thermal vias to inner copper planes.
Recommended
Recommended Products Summary
Engineering reference data for BSC094N06LS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0901NSATMA1 | BSC0906NSATMA1 | IAUCN04S7N012ATMA1 | IPD060N03LGATMA1 | BSD235CH6327XTSA1 | IRF7832TRPBF |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) - same | PG-TDSON-8-6 (SuperSO8 5x6) - same | PG-TDSON-8-6 (SuperSO8 5x6) - same | PG-TDSON-8-6 (SuperSO8 5x6) - same | PG-TDSON-8-6 (SuperSO8 5x6) - same | SO-8 (same pinout family) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS max | 60 V | 60 V | 60 V | 40 V (-33%) | 30 V (-50%) | 20 V (-67%, P-ch) | 30 V (-50%) |
| RDS(on) max @10V | 9.4 mΩ | ~9 mΩ | ~9 mΩ | ~1.2 mΩ | ~6 mΩ | ~45 mΩ | ~4 mΩ |
| ID max @ TC=25C | 47 A | ~47 A | ~47 A | [DATA_NEEDED] | [DATA_NEEDED] | ~6 A | ~20 A |
| Technology | OptiMOS 5 logic-level | OptiMOS 5 logic-level | OptiMOS 5 logic-level | OptiMOS 7 / similar advanced | OptiMOS G3 | OptiMOS P-channel | HEXFET (older planar) |
| Logic-level VGS drive | Yes (4.5 V) | Yes (4.5 V) | Yes (4.5 V) | Yes | Yes | Yes | Yes (4.5 V) |
| Polarity | N-channel | N-channel | N-channel | N-channel | N-channel | P-channel (complementary) | N-channel |
| Approx. qty-1 price | $1.12 | ~$1.10 | ~$1.10 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Logic-level 4.5 V VGS drive enables direct MCU GPIO control without charge pump (vs Standard Vth (10 V) OptiMOS 5 N-channel MOSFETs)
- 60 V VDS gives >20 % safety margin above 48 V telecom bus (vs IAUCN04S7N012ATMA1 (40 V) and IPD060N03LGATMA1 (30 V))
- OptiMOS 5 platform delivers best-in-class FOM (RDS(on) × Qg) (vs IRF7832TRPBF (older HEXFET process))
- SuperSO8 5x6 (PG-TDSON-8-6) package provides ~1 °C/W RthJC (vs Larger D2PAK / TO-252 packages)
Design Notes
Estimated: At VDS=48 V, ID=5 A, and 50 % duty cycle the BSC094N06LS5ATMA1 dissipates ~0.235 W per switch. The PG-TDSON-8-6 (SuperSO8 5x6) package has RthJC ~1.0 °C/W max, so junction temperature rises ~0.24 °C above case — well within the 150 °C limit. Above ~10 A continuous on a 2 oz FR-4 PCB without a heatsink, RthJA dominates (typically 50–70 °C/W on 1 sq-in copper) and thermal runaway becomes a risk; expand copper area or add thermal vias to inner planes.
Place the gate driver within 5 mm of pin 4 (GATE) and use a 10–47 Ω gate resistor to suppress ringing caused by gate-source and drain-source parasitic inductances. Keep the high-current drain loop (drain pin -> transformer/inductor -> return source) as small as possible — under 10 mm total loop length — to minimize VDS overshoot during turn-off. A 1 nF–10 nF snubber or TVS across drain-source is recommended when switching inductive loads above 30 V.
The SuperSO8 5x6 exposed pad must be soldered to a copper pour that covers at least the drain-pad area; stitch the pour to inner-layer ground with an array of 0.3 mm thermal vias on a 1 mm pitch to drop RthJA by 30–50 %. Keep the gate-trace width ≥0.3 mm and avoid running the gate trace parallel to the drain trace — capacitive coupling from drain to gate can cause Miller-induced turn-on and catastrophic shoot-through.
Estimated: Despite the 60 V VDS rating, peak VDS transients during hard-switching of a 48 V rail can reach 70–80 V without snubbing; always measure the worst-case VDS waveform on a prototype and add an RC snubber or TVS clamp if overshoot exceeds 80 % of 60 V. Do not assume the 4.5 V VGS rating provides 4.5 V enhancement at high drain current — consult the RDS(on) curve at your actual VGS to ensure adequate margin.
OptiMOS 5 supports fast switching edges (dV/dt > 50 V/ns) which can radiate EMI through the drain-source loop. Add a small ferrite bead in series with the gate (just before the gate resistor) to slow the turn-on edge by 5–10 ns without significantly increasing switching loss. Place an RC snubber (1–10 Ω + 100 pF–1 nF) across the MOSFET to damp high-frequency ringing and reduce conducted EMI on the input bus.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified — choose IAUC100N10S5N040ATMA1 or other AEC-Q100 Infineon parts for automotive safety applications. Halogen-free status not explicitly stated in provided web data — set to unknown per Data Authenticity Rules.
