BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon
MPN: BSC010NE2LSIATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
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View Datasheet →BSC010NE2LSIATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series / Family | OptiMOS 25V |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) at TA | 38 A |
| Continuous Drain Current (ID) at TC | 100 A |
| Power Dissipation (PD) at TA | 2.5 W |
| Power Dissipation (PD) at TC | 96 W |
| Package | PG-TDSON-8-7 (TDSON-8 EP) |
| Mounting Type | Surface Mount |
| Configuration | Single N-Channel |
| Technology | OptiMOS (Trench) |
| Operating Temperature Range | -55C to +150C (TJ) |
| Pin Count | 8 |
| RoHS Status | Compliant |
| Gate Drive | Logic-level compatible |
BSC010NE2LSIATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate input |
| Pin 2 | Drain — Drain connection (also exposed pad) |
| Pin 3 | Drain — Drain connection |
| Pin 4 | Drain — Drain connection |
| Pin 5 | Drain (Exposed Pad) — Drain and thermal pad - solder to PCB copper pour |
| Pin 6 | Drain — Drain connection |
| Pin 7 | Drain — Drain connection |
| Pin 8 | Source — MOSFET source |
Safe Operating Area (DC, TC=25C)
Typical Applications
BSC010NE2LSIATMA1 is suitable for 6 applications: 12V Point-of-Load (POL) Synchronous Rectification, Hot-Swap and OR-ing in 12V Power Distribution, CPU/GPU VRM Low-Side Switch, Battery Management System (BMS) Discharge Path, DC Motor Drive and Solenoid Switching, Automotive 12V Load Switching.
12V Point-of-Load (POL) Synchronous Rectification
The BSC010NE2LSIATMA1 is widely used as the low-side synchronous FET in 12 V-input buck converters for server, telecom, and computing point-of-load rails. Its 25 V VDS rating provides safe margin above a nominal 12 V bus with transients, and the very low Rds(on) minimizes conduction loss to keep efficiency above 95% at full load. Placed on the low side of a buck topology, it complements a high-side control FET; the TDSON-8 exposed pad allows high continuous current without external heatsinking when board copper is sized appropriately.
Recommended
Hot-Swap and OR-ing in 12V Power Distribution
In hot-swap controllers and OR-ing FETs for redundant 12 V power distribution, the BSC010NE2LSIATMA1 acts as the in-line switch that connects or isolates a live bus. Its 100 A TC current rating handles inrush and short-circuit transients, and the 25 V VDS gives margin for inductive kickback during fault events. The TDSON-8 footprint allows compact PCB layouts in blade servers and telecom equipment where board area is at a premium.
Recommended
CPU/GPU VRM Low-Side Switch
Motherboard voltage regulator modules (VRMs) for CPUs and GPUs use the BSC010NE2LSIATMA1 as the synchronous low-side MOSFET in multi-phase buck converters. The part's low Qg supports sub-50 ns switching transitions, enabling multi-MHz operation without excessive switching loss. The exposed thermal pad spreads heat from the die to inner copper layers, which is critical in space-constrained VRM layouts where forced-air cooling is limited.
Recommended
Battery Management System (BMS) Discharge Path
In lithium-ion battery packs, the BSC010NE2LSIATMA1 can be used as the discharge-path FET in 12 V nominal battery systems, where its low Rds(on) minimizes I^2R loss during high-current discharge. The 25 V VDS comfortably exceeds the maximum pack voltage of a 3S or 4S Li-ion stack. Infineon's OptiMOS trench technology provides avalanche ruggedness, which protects the FET during abnormal load-dump events common in automotive and e-mobility battery systems.
Recommended
DC Motor Drive and Solenoid Switching
Industrial DC motor drives, solenoid drivers, and relay replacements use the BSC010NE2LSIATMA1 as a low-side switch because its 100 A TC current capability handles motor inrush, and the 25 V VDS covers 12-24 V brushed-motor systems. The logic-level gate threshold enables direct drive from a 3.3 V or 5 V microcontroller GPIO, eliminating the need for a discrete gate driver in low-frequency switching applications.
Recommended
Automotive 12V Load Switching
Body-electronics modules in automotive applications use the BSC010NE2LSIATMA1 for high-side or low-side switching of lamps, LEDs, motors, and resistive loads on the 12 V board net. While the standard part is not AEC-Q100 qualified, its electrical ruggedness and exposed-pad thermal performance make it a popular choice in non-safety automotive subsystems. For safety-critical automotive applications, AEC-Q100-qualified companions from Infineon's OptiMOS automotive line should be substituted.
Recommended
Recommended Products Summary
Engineering reference data for BSC010NE2LSIATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0906NSATMA1 | BSC0901NSATMA1 | BSC0902NSIATMA1 | BSC014N04LSIATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-7 | PG-TDSON-8-7 (same) | PG-TDSON-8-7 (same) | PG-TDSON-8-7 (same) | PG-TDSON-8-7 (same) |
| Drain-Source Voltage (VDS) | 25 V | 25 V (same) | 25 V (same) | 25 V (same) | 40 V (higher) |
| Continuous Drain Current at TA | 38 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Continuous Drain Current at TC | 100 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation at TC | 96 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Rds(on) Target | Lowest (~1 mOhm) | ~9 mOhm | ~9 mOhm | [DATA_NEEDED] | ~1.4 mOhm |
| Technology | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V | OptiMOS 40V |
Key Differentiators
- Lowest Rds(on) in Infineon's 25V OptiMOS TDSON-8 family (vs BSC0906NSATMA1)
- Optimized voltage class for 12 V bus rails (vs BSC014N04LSIATMA1)
- High continuous current capability in compact footprint (vs BSC0901NSATMA1)
Design Notes
Estimated: At TC=100C and PD=96 W maximum, the die-to-case thermal path is the limiting factor. Solder the exposed pad to a copper pour of at least 1 square inch on top and bottom layers stitched with thermal vias (12-16 vias, 0.3 mm drill). Without proper PCB thermal design, the part will derate significantly below the 100 A TC rating. Use 2 oz copper on outer layers for high-current applications.
Keep the gate-drive loop (gate-driver output to MOSFET gate-to-source) as small as possible - this loop should be no larger than 5-10 mm square to limit parasitic inductance. The high-current loop (input cap to high-side FET to low-side FET back to input cap) should be the smallest possible. Place the gate pull-down resistor (10-100 kOhm) directly between gate and source pins to prevent unintended turn-on during transient events.
Do not exceed 25 V VDS even briefly - avalanche breakdown will permanently damage the part. Add a TVS or snubber across drain-source if inductive kickback is expected. Verify VGS stays within +/-20 V absolute maximum; use a gate-source Zener clamp if the gate driver could overshoot. Confirm operating junction temperature stays below 150C for long-term reliability - derate by 25-30C for safety margin in continuous operation.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications choose an automotive-grade Infineon OptiMOS sibling.
