BSC120N03LSGATMA1 vs BSO150N03MDGXUMA1 Comparison
Detailed side-by-side comparison of BSC120N03LSGATMA1 by Infineon and BSO150N03MDGXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 β ActiveInfineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 β ActiveSpecification Comparison
| Parameter | BSC120N03LSGATMA1 | BSO150N03MDGXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.37 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta=25C | 12 A | β |
| Continuous Drain Current (ID) at Tc=25C | 39 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | +/-20 V | 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-State Resistance RDS(on) at VGS=10V | 12 mOhm (typical) | β |
| On-State Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 28 W | β |
| Operating Temperature Range | -55C to +150C (TJ) | -55C to +150C |
| Package | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) | PG-DSO-8 (SO-8 with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Part Number | β | BSO150N03MDGXUMA1 |
| Product Type | β | Dual N-Channel MOSFET Array |
| Technology | β | OptiMOS 3M (30V trench MOSFET) |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) max per channel | β | 9.3 A |
| On-State Resistance (RDS(on)) max | β | 15 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) typ | β | 1.0 V |
| Power Dissipation (PD) max | β | 1.4 W |
| Channel Configuration | β | Dual N-Channel (independent) |