BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
MPN: BSC120N03LSGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.91 | $0.91 |
| 10 | $0.82 | $8.20 |
| 100 | $0.68 | $68.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.45 | $450.00 |
| 5,000 | $0.36 | $1,800.00 |
Drop-in alternatives for BSC120N03LSGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC050N03LSGATMA1
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →BSC0901NSATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC0906NSATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →BSC030N03LSGATMA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →BSZ0901NSATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC120N03LSGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 3 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 12 A |
| Continuous Drain Current (ID) at Tc=25C | 39 A |
| Gate-Source Voltage (VGS) max | +/-20 V |
| On-State Resistance RDS(on) at VGS=10V | 12 mOhm (typical) |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 28 W |
| Operating Temperature Range | -55C to +150C (TJ) |
| Package | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
BSC120N03LSGATMA1 Pin Configuration
| Pin 1 | Source — Source connection (low-side) |
| Pin 2 | Source — Source connection (low-side) |
| Pin 3 | Source — Source connection (low-side) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Kelvin Source — Kelvin source for gate-drive return (minimizes source-inductance-induced gate oscillation) |
| Pin 6 | Source — Source connection (low-side) |
| Pin 7 | Source — Source connection (low-side) |
| Pin 8 | Source — Source connection (low-side) |
| Pin PAD | Drain — Drain (exposed thermal pad on bottom of package) |
Safe Operating Area (DC)
Typical Applications
BSC120N03LSGATMA1 is suitable for 6 applications: Synchronous Buck DC-DC Converters, Server and Datacom VRM Solutions, Telecom Point-of-Load Converters, Battery Management Protection Circuits, Hot-Swap and Load Switch Circuits, Motor Drive and Low-Voltage PWM Control.
Synchronous Buck DC-DC Converters
The BSC120N03LSGATMA1 serves as the low-side synchronous rectifier (SR FET) in 12V-input synchronous buck converters. Its 12 mOhm typical RDS(on) at VGS=10V keeps conduction losses below 1.7W at 12A load, while the OptiMOS 3 platform's low Qg (typical 8-12 nC) and Qoss reduce switching losses at 300 kHz-1 MHz frequencies. Placed on the low-side switch node with a high-side controller FET, it enables >95% peak efficiency in VRM designs. Designers should verify dead-time timing to avoid body-diode conduction and minimize reverse-recovery losses in this position.
Recommended
Server and Datacom VRM Solutions
The BSC120N03LSGATMA1 is specifically designed for server, datacom, and telecom voltage regulator modules where its 30V VDS rating provides headroom for 12V bus transients and its low RDS(on) x Qg figure-of-merit minimizes total losses in multi-phase VR topologies. In a 6-phase VRM for CPU core rails, each phase can use one BSC120N03LSGATMA1 as the SR FET, distributing thermal load across multiple packages. The PG-TDSON-8-5 footprint with exposed pad supports 28W power dissipation at the case, suitable for high-current multi-phase designs with adequate PCB copper.
Recommended
Telecom Point-of-Load Converters
In telecom 48V-to- POL (point-of-load) conversion stages, the BSC120N03LSGATMA1 can be used on the secondary side of isolated bus converters or in non-isolated buck stages stepping 12V down to 1-5V for ASICs. Its 30V VDS rating comfortably handles 12V and 24V telecom buses, while the SuperSO-8 footprint enables compact POL modules. The device's 12 mOhm RDS(on) supports 5-10A continuous POL current with manageable thermal rise when paired with adequate PCB copper (1+ square inch of pour recommended).
Recommended
Battery Management Protection Circuits
The BSC120N03LSGATMA1 functions as a high-side or low-side protection FET in multi-cell Li-ion battery management systems where its 30V VDS rating supports 4S (16.8V max) packs with avalanche margin. Its 12 mOhm RDS(on) limits voltage drop during discharge to approximately 144 mV at 12A, preserving battery runtime. The SuperSO-8 footprint allows compact BMS PCB layouts. Designers should add TVS protection for inductive load switching and verify SOA curves for short-circuit and hot-plug events typical in battery pack designs.
Recommended
Hot-Swap and Load Switch Circuits
The BSC120N03LSGATMA1 enables inrush-current-limited hot-swap circuits on 12V distributed bus systems, where its 30V rating handles nominal and transient bus voltages and its SOA capability supports linear-mode turn-on at high drain currents. With a gate resistor and soft-start controller, the device transitions from full-VDS linear operation (high dissipation) to fully-enhanced switching as the load capacitance charges. The 12 mOhm RDS(on) minimizes steady-state voltage drop after the hot-swap event completes, suitable for blade-server and telecom shelf applications.
Recommended
Motor Drive and Low-Voltage PWM Control
In low-voltage brushed DC motor drive and PWM switching applications, the BSC120N03LSGATMA1 handles 12-24V motor supply rails with switching frequencies up to 50 kHz. Its 12 mOhm RDS(on) at 12A delivers torque with minimal voltage drop, while the SuperSO-8 package's 28W Tc-rated dissipation supports continuous motor stall current (within thermal limits). The device pairs well with half-bridge gate drivers for H-bridge motor topologies driving small pumps, fans, and valves in industrial and white-goods applications.
Recommended
Recommended Products Summary
Engineering reference data for BSC120N03LSGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC050N03LSGATMA1 | BSC0901NSATMA1 | BSC0906NSATMA1 | BSC030N03LSGATMA1 | BSZ0901NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-5 (SuperSO-8) | PG-TDSON-8-5 (SuperSO-8) - same | PG-TDSON-8-5 (SuperSO-8) - same | PG-TDSON-8-5 (SuperSO-8) - same | PG-TDSON-8-5 (SuperSO-8) - same | PG-TSDSON-8 (SuperSO-8) - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V - same | 30 V - same | 30 V - same | 30 V - same | 30 V - same |
| On-State Resistance RDS(on) at VGS=10V (typical) | 12 mOhm | 5 mOhm (better) | 9 mOhm (better) | 9 mOhm (better) | 3 mOhm (much better) | 9 mOhm (better) |
| Continuous Drain Current at Tc=25C | 39 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Product Family / Generation | OptiMOS 3 | OptiMOS 3 - same | OptiMOS 3 - same | OptiMOS 3 - same | OptiMOS 3 - same | OptiMOS 3 - same |
| Unit Price (qty 1, USD) | 0.91 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Pin-to-Pin Compatible | Yes | Yes (drop-in) | Yes (drop-in) | Yes (drop-in) | Yes (drop-in) | Yes (drop-in) |
Key Differentiators
- Best-in-class 30V RDS(on) x area figure-of-merit for SuperSO-8 (vs BSC030N03LSGATMA1 (same family, 3 mOhm))
- Industry-standard SuperSO-8 footprint for design reuse (vs BSZ0901NSATMA1 (PG-TSDSON-8 variant))
- OptiMOS 3 platform - proven reliability and broad ecosystem support (vs BSC015NE2LS5IATMA1 (newer OptiMOS 5 25V))
Design Notes
At 12A continuous drain current (Ta=25C), the BSC120N03LSGATMA1 dissipates approximately P=I^2 x RDS(on) = 144 x 0.012 = 1.73W. With RthJA of approximately 50 C/W on a standard JEDEC 2s2p test board (estimated: 4-layer FR4 with 1 oz copper), junction temperature rises about 86C above ambient. At higher currents (e.g., 39A at Tc=25C, dissipating approximately 18W), the case-temperature-limited 28W rating applies. For high-current designs, place thermal vias directly under the exposed drain pad (0.3 mm pitch, plugged and plated) to reduce RthJA to 20-30 C/W.
Use the Kelvin-source pin (pin 5) for the gate-driver return path to eliminate source-inductance-induced gate-oscillation. Keep the gate-loop area minimal (<1 cm^2) by routing gate-drive traces on an inner layer adjacent to the source-return plane. Place the gate-driver IC within 5 mm of the FET's gate pin. Use multiple source wires/vias to the source pads (pins 1-3, 6-8) and stitch the exposed drain pad with at least 9 thermal vias (0.3 mm diameter) for heat extraction.
Do not exceed VGS=+/-20V - use a gate-source Zener clamp (typically 12V) on each FET to protect against dv/dt-induced gate overvoltage in bridge topologies. Verify SOA capability for linear-mode operation (hot-swap turn-on) by consulting the SOA curve in the datasheet - the device can sustain DC stress only within the thermal envelope shown. Always add a small (10-100 ohm) gate resistor to damp ringing; values too high (>100 ohm) slow switching and increase losses, values too low (<5 ohm) may cause oscillations.
Estimated switching losses: at 500 kHz with VDS=15V and ID=10A, switching losses approximate Psw = 0.5 x VDS x ID x (trise + tfall) x fsw. Assuming trise/tfall of 10 ns each, Psw = 0.5 x 15 x 10 x 20e-9 x 500e3 = 0.75W per FET. Combined with conduction losses of approximately 1.2W at 10A (10 x 10 x 0.012), total per-FET dissipation is approximately 2W. Use this to size copper area and consider forced-air cooling if multiple FETs are stacked.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial, server, datacom and telecom applications; for automotive designs use Infineon automotive-grade OptiMOS 3 variants.
