BSC360N15NS3GATMA1 vs BSC520N15NS3G Comparison

Detailed side-by-side comparison of BSC360N15NS3GATMA1 by Infineon and BSC520N15NS3G by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC360N15NS3GATMA1 BSC520N15NS3G
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.62
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC360N15NS3GATMA1 BSC520N15NS3 G
Technology OptiMOS 3 (N-Channel Trench MOSFET) OptiMOS 3 (trench-gate N-channel)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Tc 33 A —
On-Resistance RDS(on) max at VGS=10V 36 mOhm —
Power Dissipation (PD) at Tc 74 W —
Gate Threshold Voltage (VGS th) typ 3.0 V —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
Package PG-TDSON-8-1 (SuperSO8, 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55°C to +150°C (junction) —
Avalanche Energy Rated Yes —
RoHS Status Compliant —
Lead-Free Yes —
MSL Level 1 —
Drain-Source Voltage (VDS) max — 150 V
Continuous Drain Current (ID) max at TC=25C — 21 A
On-Resistance RDS(on) max — 52 mΩ at VGS=10 V
Power Dissipation (Ptot) at TC=25C — 57 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Operating Junction Temperature — -55C to +150C
Pin Count — 8
Lead Plating — Pb-free
RoHS Compliance — Compliant
JEDEC Qualification — Qualified per JEDEC
Channel Type — N-Channel (normal level)
Typical Application — DC-DC conversion, synchronous rectification

Datasheets & Resources

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