BSF134N10NJ3GXUMA1 vs BSC014NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSF134N10NJ3GXUMA1 by Infineon and BSC014NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSF134N10NJ3GXUMA1
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 β ActiveInfineon
BSC014NE2LSIATMA1
BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon
BSC014NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSF134N10NJ3GXUMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 100 V | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 25 V |
| Continuous Drain Current (ID) at TA=25Β°C | 9 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 40 A | β |
| Power Dissipation (PD) at TA=25Β°C | 2.2 W | β |
| Power Dissipation (PD) at TC=25Β°C | 43 W | β |
| Package | MG-WDSON-2 (CanPAK M) | PG-TDSON-8-7 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | β |
| Terminal Position | Bottom | β |
| Terminal Finish | Silver Nickel | β |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Technology | Trench-gate OptiMOS planar | N-Channel MOSFET (OptiMOS 25V) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | β |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | β |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (ID, Ta) | β | 33 A |
| Continuous Drain Current (ID, Tc) | β | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | β | 100 A |
| On-State Resistance RDS(on) | β | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 74 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| Lead-Free | β | Yes |