BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
MPN: BSF134N10NJ3GXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.92 | $920.00 |
| 5,000 | $0.78 | $3,900.00 |
BSF134N10NJ3GXUMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or switch current in power-conversion circuits. Within the broader taxonomy it sits at MOSFET → transistor → discrete semiconductor → semiconductor. The OptiMOS family specifically targets high-efficiency switched-mode power supplies (SMPS), motor drives, and synchronous rectification, where low conduction and switching losses translate directly into higher system efficiency and smaller thermal budgets.
Key features of the BSF134N10NJ3 G include a low on-state resistance for the 100 V class, an integrated body diode for synchronous-rectifier operation, and the compact CanPAK M / MG-WDSON-2 footprint with an exposed top-cooling pad. The device is rated for surface-mount reflow and is supplied on tape-and-reel for high-volume assembly. The drain-lead frame is bottom-side, allowing direct PCB heatsinking through the drain pad.
Architecturally, the device uses Infineon's planar OptiMOS cell design with trench-gate technology to balance low RDS(on), low gate charge (Qg), and robust avalanche capability. Optimized FOM (RDS(on) × Qg) reduces switching losses at high frequency, which is critical for telecom and server SMPS stages operating at 100 kHz to 500 kHz.
Typical applications include primary-side switches and synchronous rectifiers in 48 V telecom and server SMPS, 24 V to 80 V industrial motor drives, battery-management protection FETs in e-mobility and power tools, and high-side switches in solar micro-inverters. The 100 V rating provides adequate margin in 60 V / 72 V systems.
When designing with this part, verify the PCB drain pad copper area is sufficient to keep junction temperature below 150 °C under worst-case load, and place the gate drive loop compact to minimize ringing at high di/dt. This page combines distributor pricing, drop-in alternatives, and design guidance that go beyond the manufacturer's datasheet alone.
Drop-in alternatives for BSF134N10NJ3GXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSF134N10NJ3GXUMA1 (same form factor and footprint) — differing in Package, Technology, MSL Level, Drain-Source Voltage (VDS), Configuration.
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View Datasheet →BSF134N10NJ3GXUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 100 V |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 9 A |
| Continuous Drain Current (ID) at TC=25°C | 40 A |
| Power Dissipation (PD) at TA=25°C | 2.2 W |
| Power Dissipation (PD) at TC=25°C | 43 W |
| Package | MG-WDSON-2 (CanPAK M) |
| Mounting Type | Surface Mount |
| Configuration | Single with built-in diode |
| Terminal Position | Bottom |
| Terminal Finish | Silver Nickel |
| RoHS Status | Compliant |
| Technology | Trench-gate OptiMOS planar |
BSF134N10NJ3GXUMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Source — Source connection (top-side pad) |
| Pin 3 | Drain — Drain tab (bottom-side, PCB heatsink) |
Power Derating & Thermal Characteristics
No manufacturer-published SOA (Safe Operating Area) curve is available for BSF134N10NJ3GXUMA1. Always operate within the absolute maximum ratings specified in the manufacturer datasheet.
Typical Applications
BSF134N10NJ3GXUMA1 is suitable for 6 applications: 48 V Telecom and Server SMPS Primary-Side Switch, 24 V to 80 V Industrial Motor Drive Half-Bridge, Battery-Management Protection FET (48 V e-Mobility), Synchronous Rectifier in 48 V-to-12 V DC-DC Converters, Solar Micro-Inverter High-Side Switch, Hot-Swap / Inrush Protection Switch (48 V Bus).
48 V Telecom and Server SMPS Primary-Side Switch
The BSF134N10NJ3GXUMA1's 100 V VDS rating and 9 A / 40 A continuous drain current make it well-suited for primary-side switching in isolated 48 V telecom and server SMPS designs. The 30 % RDS(on) improvement of the 100 V OptiMOS family reduces conduction loss at the 100 kHz to 500 kHz switching frequencies typical in these converters, lowering total power dissipation by approximately 10 to 15 % versus the prior generation. With 2.2 W / 43 W dissipation ratings, the CanPAK M package exposes the drain pad to the PCB copper pour for direct cooling. Placed on the primary-side MOSFET position of a half-bridge or full-bridge topology, it supports 90 %+ peak efficiency required by 80 PLUS Titanium server PSUs.
Recommended
24 V to 80 V Industrial Motor Drive Half-Bridge
In 24 V, 48 V, and 80 V industrial BLDC and PMSM motor drives, the BSF134N10NJ3GXUMA1 serves as a low-side or high-side MOSFET in three-phase half-bridges. The 100 V VDS gives 25 % voltage headroom above the 80 V bus maximum, accommodating back-EMF and transient ringing without avalanche breakdown. The integrated body diode supports free-wheeling during PWM commutation, eliminating the need for external anti-parallel diodes and shrinking PCB area. With a low FOM (RDS(on) × Qg) from the OptiMOS 100 V family, switching losses at 20 to 50 kHz PWM are minimized, allowing continuous motor current above 9 A with moderate copper heatsinking.
Recommended
Battery-Management Protection FET (48 V e-Mobility)
The BSF134N10NJ3GXUMA1 is suitable as a high-side or low-side protection MOSFET in 48 V battery packs for light electric vehicles, e-bikes, and battery-powered industrial tools. The 100 V breakdown comfortably exceeds the 48 V nominal pack plus transient spikes during regenerative braking or load dump, while the 40 A TC rating supports continuous discharge currents of typical 20 to 30 A e-bike drive trains. Infineon's OptiMOS 100 V family provides low RDS(on) to minimize voltage drop and self-heating during idle-on protection mode. The MG-WDSON-2 footprint allows dense PCB layouts inside space-constrained battery enclosures.
Recommended
Synchronous Rectifier in 48 V-to-12 V DC-DC Converters
As a synchronous rectifier on the secondary side of an isolated 48 V-to-12 V DC-DC converter, the BSF134N10NJ3GXUMA1 replaces the secondary-side Schottky diode to recover rectification losses. The built-in body diode maintains continuous conduction during the dead-time interval, and the low RDS(on) reduces conduction loss to under 1 % of output power at 10 A load. Switching losses at 200 to 400 kHz are dominated by gate charge, and the OptiMOS family's optimized FOM keeps total loss budget inside the converter's thermal envelope. The 100 V VDS provides ample margin over the reflected secondary stress.
Recommended
Solar Micro-Inverter High-Side Switch
The BSF134N10NJ3GXUMA1 is a strong candidate for the high-side switch in 60 V solar micro-inverters, where the 100 V VDS comfortably covers the 40 V to 60 V open-circuit PV string maximum and inductive ringing during commutation. Its 9 A continuous rating matches typical micro-inverter power levels of 300 W to 600 W at the panel level. The OptiMOS 100 V family's low gate charge and low FOM support the high switching frequencies (50 kHz to 100 kHz) needed to keep magnetic components small in residential micro-inverter designs.
Recommended
Hot-Swap / Inrush Protection Switch (48 V Bus)
In 48 V telecom hot-swap and eFuse applications, the BSF134N10NJ3GXUMA1 functions as the load-side protection MOSFET, controlling the inrush current when a board is plugged into a live 48 V backplane. The 100 V VDS provides margin over the maximum bus voltage and transient ringing from hot-plug events, while the 40 A TC rating supports typical server card currents of 20 A to 30 A. The low RDS(on) keeps steady-state conduction loss low in the always-on protection FET position. Designers should add a gate-source resistor network to control the dv/dt ramp during turn-on.
Recommended
Recommended Products Summary
Engineering reference data for BSF134N10NJ3GXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC019N08NS5ATMA1 | BSC0921NDIATMA1 | BSC014NE2LSIATMA1 | IPD068N10N3GATMA1 | IPB024N10N5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | MG-WDSON-2 (CanPAK M) | PG-TDSON-8 (CanPAK M family) | PG-TDSON-8 (CanPAK M family) | PG-TDSON-8 (CanPAK M family) | TO-252 (DPAK) | TO-263 (D2PAK) |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 80 V | 30 V | 25 V | 100 V | 100 V |
| OptiMOS Family | 100 V OptiMOS | 80 V OptiMOS | 30 V OptiMOS | 25 V OptiMOS | 100 V OptiMOS 3 | 100 V OptiMOS 5 |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- 30 % lower RDS(on) versus previous-generation OptiMOS (vs BSC019N08NS5ATMA1 (80 V OptiMOS 5))
- Higher voltage class with same CanPAK M footprint (vs BSC0921NDIATMA1 (30 V CanPAK M))
- Integrated body diode for synchronous-rectifier operation (vs IPD068N10N3GATMA1 (TO-252 DPAK))
- Lower junction temperature rise in compact surface-mount package (vs IPB024N10N5ATMA1 (D2PAK, through-hole style))
Design Notes
Estimated: at 100 % duty-cycle switching from a 48 V bus with 9 A continuous drain current (TA = 25 °C) the worst-case junction rise in MG-WDSON-2 is dominated by thermal resistance from the drain pad to PCB copper. Provide at least 1 square inch (≈ 6.5 cm²) of 2 oz copper on the drain pad to keep junction temperature below 125 °C in 48 V SMPS service. Forced-air cooling is required if ambient exceeds 40 °C.
Keep the gate-drive loop (gate resistor + driver IC return) as compact as possible - target a loop area under 1 cm² to minimize ringing at high di/dt. Place the gate-source 10 kΩ pull-down resistor directly at the gate pad to prevent accidental turn-on during hot-plug or transient ringing. A small ferrite bead on the gate lead can damp high-frequency oscillations in CanPAK M layouts.
Do not exceed VGS = ±20 V absolute maximum - 10 V nominal VGS is recommended for lowest RDS(on). Avoid body-diode reverse recovery issues by ensuring dead-time in synchronous-rectifier topologies is at least 50 ns. Do not apply gate drive when drain-source voltage exceeds 80 % of VDS rating during abnormal load conditions; add a transient-voltage suppressor across drain-source if the bus is hot-pluggable.
Per IPC-2221 and IPC-7351 surface-mount guidelines for WDSON-2 packages, the land pattern should be a 1:1 mirror of the device footprint with no thermal relief spokes on the drain pad - the goal is maximum thermal conductivity into the PCB copper. Use via arrays under the drain pad (typical 0.3 mm via diameter, 0.6 mm pitch) for double-sided cooling on a 4-layer board.
Compliance Information
RoHS/REACH compliant per Infineon product page ('G' suffix). Lead-free (silver-nickel terminal finish). AEC-Q100 not applicable - this part is in the standard OptiMOS 100 V industrial grade; automotive-grade OptiMOS parts carry the Q suffix.
