BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon
MPN: BSC014NE2LSIATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.99 | $0.99 |
| 10 | $0.85 | $8.50 |
| 100 | $0.71 | $71.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.55 | $550.00 |
| 3,000 | $0.48 | $1,440.00 |
Drop-in alternatives for BSC014NE2LSIATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC010NE2LSIATMA1
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →BSC012NE2LSIATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
BSC014N04LSATMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →BSC018N04LSGATMA1
✅ Drop-In✓ In Stock
$0.52 / Unit
View Datasheet →BSC016N06NSTATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.92 / Unit
View Datasheet →BSZ0901NSIATMA1
✅ Drop-In✓ In Stock
$0.34 / Unit
View Datasheet →BSC014NE2LSIATMA1 Maximum Ratings & Electrical Characteristics
| Technology | N-Channel MOSFET (OptiMOS 25V) |
| Drain-Source Voltage (VDS) | 25 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID, Ta) | 33 A |
| Pulsed Drain Current (IDM, Tc) | 100 A |
| On-State Resistance RDS(on) | 1.4 mOhm (typ) at VGS = 10 V |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 74 W |
| Operating Junction Temperature | -55 °C to +150 °C |
| Package | PG-TDSON-8-7 (SuperSO8) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
BSC014NE2LSIATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source (low-side Kelvin return) |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
| Pin EP | D — Exposed Pad (Drain) - thermal pad, must be soldered to copper pour |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
BSC014NE2LSIATMA1 is suitable for 6 applications: 12V Synchronous Rectification in VRMs, GPU / FPGA Point-of-Load Converters, OR-ing FET in Redundant Power Supplies, Battery Protection and Load Switch in Li-ion Packs, Motor Drive H-Bridge Low-Side Switch, USB-PD and Quick-Charge Sink Power Path.
12V Synchronous Rectification in VRMs
The BSC014NE2LSIATMA1 fits as the low-side synchronous rectifier in 12 V input buck VRMs powering server, telecom, and FPGA rails. Its 1.4 mOhm RDS(on) at 10 V VGS keeps conduction loss low at 20-30 A continuous, while the PG-TDSON-8-7 exposed pad pulls heat directly into the inner-layer copper pour. At 500 kHz switching with 25 A average low-side current, this part dissipates roughly 0.9 W (I²·R), versus 1.5 W for a 3 mOhm DPAK alternative. Use it paired with ISC015N06NM5LF2ATMA1 as the 60 V high-side control FET, and gate-drive via a 1EDN7126GXTMA1 or IR2104STRPBF half-bridge driver for sub-30 ns rise times.
Recommended
GPU / FPGA Point-of-Load Converters
For multi-phase POL converters delivering 0.6-1.8 V at 40-60 A to GPUs, FPGAs, and AI accelerators, the BSC014NE2LSIATMA1 serves as the low-side FET in each phase. The 1.4 mOhm RDS(on) minimizes root-mean-square conduction loss across phases, and the small SuperSO8 footprint enables dense phase spreading. At 600 kHz switching the part contributes about 0.5 W per phase at 25 A, keeping junction rise under 30 °C with a 1 sq-in copper pour. Use TLF11251LDXUMA1 or TPS53667-style controllers for multi-phase current sharing.
Recommended
OR-ing FET in Redundant Power Supplies
In N+1 redundant 12 V power shelves, the BSC014NE2LSIATMA1 functions as an OR-ing MOSFET that isolates a failed supply from the shared bus. The 1.4 mOhm RDS(on) adds only 60-70 mV of drop at 50 A load, preserving load-regulation margin for downstream DC-DC stages. The 25 V VDS rating provides ample headroom against inductive transients during hot-swap insertion. Use a TLE42744EV50XUMA1 or similar hot-swap controller to drive the gate with soft turn-on, preventing inrush surges. The Infineon OptiMOS cell structure delivers fast body-diode recovery for safe commutation during source failover.
Recommended
Battery Protection and Load Switch in Li-ion Packs
In 1S-3S Li-ion battery packs delivering 5-20 A continuous to USB-PD, power-tool, or e-bike loads, the BSC014NE2LSIATMA1 acts as the main discharge load switch. Its 1.4 mOhm RDS(on) at 10 V VGS keeps voltage drop low during high-current peaks (laptops pulling 60 W via USB-PD). The 25 V VDS gives ample margin above 3S fully-charged 12.6 V. Pair with BTS3125TFATMA1 or BTS70082EPAXUMA1 high-side smart switches for additional system-level protection. The PG-TDSON-8-7 footprint fits small BMS PCBs where DPAK alternatives would not.
Recommended
Motor Drive H-Bridge Low-Side Switch
In 12-24 V brushless DC motor drives for robotics, e-bikes, and small drones, the BSC014NE2LSIATMA1 serves as the low-side switch in a 3-phase H-bridge. The 100 A pulsed rating handles motor inrush and reverse-recovery spikes from the body diode during PWM commutation at 20-50 kHz. The 1.4 mOhm RDS(on) keeps conduction loss low in continuous 15-30 A motor phases. Pair with IRS2181STRPBF or IRS21834STRPBF 3-phase gate drivers, and use BSC014N04LSATMA1 as the high-side companion where 40 V VDS is required for inductive flyback margin.
Recommended
USB-PD and Quick-Charge Sink Power Path
In USB-PD 3.1 sinks drawing 5-20 V at 3-5 A from a Type-C source, the BSC014NE2LSIATMA1 functions as the VBUS protection load switch. The 1.4 mOhm RDS(on) drops only 4-7 mV at 5 A, preserving power-delivery accuracy for downstream buck converters. The 25 V VDS comfortably handles 20 V PD profiles plus cable-transient overshoot. Pair with TLE9180D31QKXUMA1 automotive CAN/LIN SBCs for vehicle USB-PD chargers, or BTS70082EPAXUMA1 high-side switches for the legacy 5 V path.
Recommended
Recommended Products Summary
Engineering reference data for BSC014NE2LSIATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC010NE2LSIATMA1 | BSC012NE2LSIATMA1 | BSC014N04LSATMA1 | BSC018N04LSGATMA1 | BSC016N06NSTATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-7 (SuperSO8) | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS (Drain-Source Voltage) | 25 V | 25 V | 25 V | 40 V | 40 V | 60 V |
| RDS(on) at VGS=10V | 1.4 mOhm | 1.0 mOhm | 1.2 mOhm | [DATA_NEEDED] | 1.8 mOhm | [DATA_NEEDED] |
| Continuous Drain Current (Ta) | 33 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Pulsed Drain Current (Tc) | 100 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (Ta) | 2.5 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Family / Generation | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V | OptiMOS 40V | OptiMOS 40V | OptiMOS 60V |
Key Differentiators
- Lower RDS(on) within the 25V OptiMOS family at competitive cost (vs BSC010NE2LSIATMA1)
- Higher VDS breakdown margin than 20V-rated parts (vs BSC018N04LSGATMA1)
- Lower-RDS(on) Infineon 25V alternative within same family (vs BSC012NE2LSIATMA1)
Design Notes
At 30 A continuous and RDS(on) = 1.4 mOhm, the BSC014NE2LSIATMA1 dissipates approximately 1.26 W (Estimated: P = I²·R = 30² × 0.0014). The PG-TDSON-8-7 exposed pad requires a minimum 1 sq-in 2-oz copper pour on the top layer plus an array of 0.3 mm thermal vias to an inner copper flood to keep RthJA below 50 °C/W. Without proper copper spreading, junction temperature can exceed 150 °C at 30 A and trigger thermal shutdown.
Keep the gate-drive loop (gate-driver output → gate resistor → FET gate → source return → driver ground) under 1 cm² to minimize parasitic inductance. Use a 10 ohm gate resistor to dampen ringing, and place a 100 ohm resistor + diode network from gate to source to provide a default pull-down if the gate driver is unpowered. Place input ceramic bypass capacitors (10 µF X7R) within 5 mm of the source pins for stable gate-drive referenced switching.
Do not exceed VGS = ±20 V; gate-source ESD damage is a common failure mode for SuperSO8 MOSFETs. Do not operate without confirming that the drain-source transient (VDS spike during switching) stays below 25 V - add a snubber or TVS clamp if the inductive load can produce overshoot. Do not parallel multiple BSC014NE2LSIATMA1 units without individual gate resistors to prevent oscillation due to mismatched gate thresholds.
The PG-TDSON-8-7 package has source pins 2/3/4 acting as a Kelvin return - use pin 4 as the gate-driver ground reference rather than pin 2/3 to decouple the high-current source path from the gate-drive loop. This reduces gate-voltage bounce during switching transients and improves dv/dt immunity at high frequencies above 500 kHz.
Compliance Information
RoHS and lead-free per Infineon OptiMOS 25V family datasheet. Not AEC-Q100 qualified in standard grade; check BSC014NE2LSIATMA1 automotive variant (suffix) for AEC-Q100. Halogen-free status not explicitly stated in provided web data.
