BSL308CH6327XTSA1 vs BSS87H6327FTSA1 Comparison
Detailed side-by-side comparison of BSL308CH6327XTSA1 by Infineon and BSS87H6327FTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSL308CH6327XTSA1 | BSS87H6327FTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.18 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOSβ’ low-voltage power MOSFETs | β |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | β |
| Package | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT89-4-2 (SOT-89) |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | β |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | β |
| Total Power Dissipation (Ptot) | 500 mW | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | β |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | β |
| Total Gate Charge (Qg) | 5 nC @ 10 V | β |
| Input Capacitance (Ciss) | 18 pF | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55C to +150C (junction) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes (per Infineon product family convention) | β |
| FET Type | β | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) | β | 240 V |
| Continuous Drain Current (ID) | β | 260 mA (Ta) |
| Power Dissipation (PD) | β | 1 W (Ta) |
| Drain-Source On-Resistance (RDS(on)) | β | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Pin Count | β | 3 (Gate / Drain / Source) |
| Automotive Qualification | β | AEC-Q101 qualified |
| Lead-Free / Pb-Free | β | Yes (Pb-free plating) |
| Process Technology | β | Vertical DMOS |