BSL308CH6327XTSA1 vs BSS87H6327FTSA1 Comparison

Detailed side-by-side comparison of BSL308CH6327XTSA1 by Infineon and BSS87H6327FTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSL308CH6327XTSA1 BSS87H6327FTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS™ low-voltage power MOSFETs —
Configuration Complementary dual MOSFET (1 N-channel + 1 P-channel) —
Package PG-TSOP6-6 (TSOP-6, 6 pins) PG-SOT89-4-2 (SOT-89)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current - N-channel (ID, N-ch) 2.3 A —
Continuous Drain Current - P-channel (ID, P-ch) 2 A —
Total Power Dissipation (Ptot) 500 mW —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical/min/max]
On-State Resistance N-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) N-ch] —
On-State Resistance P-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) P-ch] —
Total Gate Charge (Qg) 5 nC @ 10 V —
Input Capacitance (Ciss) 18 pF —
Operating Temperature Range -55 °C to +150 °C -55C to +150C (junction)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Automotive Qualified Yes (per Infineon part-number suffix, automotive grade) —
RoHS Status Compliant Compliant
Lead-Free Yes —
Halogen Free Yes (per Infineon product family convention) —
FET Type — N-Channel enhancement-mode
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) — 260 mA (Ta)
Power Dissipation (PD) — 1 W (Ta)
Drain-Source On-Resistance (RDS(on)) — 6 ohm max at VGS=10V
Gate-Source Voltage (VGS) — +/-20 V
Pin Count — 3 (Gate / Drain / Source)
Automotive Qualification — AEC-Q101 qualified
Lead-Free / Pb-Free — Yes (Pb-free plating)
Process Technology — Vertical DMOS

Datasheets & Resources

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