BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon
MPN: BSL308CH6327XTSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.55 | $5.50 |
| 100 | $0.41 | $41.00 |
| 500 | $0.32 | $160.00 |
| 1,000 | $0.26 | $260.00 |
| 3,000 | $0.21 | $630.00 |
Drop-in alternatives for BSL308CH6327XTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSL308CH6327XTSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS™ low-voltage power MOSFETs |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Package | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A |
| Total Power Dissipation (Ptot) | 500 mW |
| Total Gate Charge (Qg) | 5 nC @ 10 V |
| Input Capacitance (Ciss) | 18 pF |
| Operating Temperature Range | -55 °C to +150 °C |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Halogen-Free | Yes (per Infineon product family convention) |
BSL308CH6327XTSA1 Pin Configuration
| Pin 1 | G1 — Gate of N-channel MOSFET (Q1) |
| Pin 2 | S1 — Source of N-channel MOSFET (Q1) |
| Pin 3 | D1 — Drain of N-channel MOSFET (Q1) |
| Pin 4 | D2 — Drain of P-channel MOSFET (Q2) |
| Pin 5 | S2 — Source of P-channel MOSFET (Q2) |
| Pin 6 | G2 — Gate of P-channel MOSFET (Q2) |
Safe Operating Area (per channel, TSOP-6 on 1oz copper)
Typical Applications
BSL308CH6327XTSA1 is suitable for 8 applications: USB On-The-Go (OTG) Power-Path Switching, Battery Protection and Load Switch, DC-DC Converter High-Side / Low-Side Switch, Automotive Body Electronics and Lighting, Small Brushed DC Motor Drive (H-Bridge Half), Portable Device Power Management and Load Switching, LED Driver and Backlight Dimming, Industrial Sensor Switching and Signal Routing.
USB On-The-Go (OTG) Power-Path Switching
The BSL308CH6327XTSA1 is well suited to USB OTG power-path switching because the complementary N+P channels deliver full bidirectional current control from a single supply rail. The n-channel handles the high-current path at 2.3 A with low on-state loss, while the p-channel provides reverse-current blocking at 2 A. Used between the USB VBUS pin and the system 5 V rail with 10 uF input/output ceramic capacitors, the device keeps total power dissipation under 250 mW during full OTG operation. Engineers value the TSOP-6 footprint for space-constrained phone and tablet designs where every mm² of PCB counts.
Recommended
Battery Protection and Load Switch
In battery-protection and load-switch modules for single-cell Li-ion packs, the BSL308CH6327XTSA1 integrates both polarities in one TSOP-6, reducing the BOM by one component. The p-channel works as the high-side disconnect switch, blocking reverse current when the pack voltage drops below the system rail; the n-channel handles the active load path with 2.3 A continuous current. At typical 3.7 V operation, gate drive comes directly from a logic-level rail with no charge pump required. Designers should add a 100 kohm gate pull-down to ensure defined off-state during controller reset.
Recommended
DC-DC Converter High-Side / Low-Side Switch
The complementary N+P topology of the BSL308CH6327XTSA1 enables a compact high-side / low-side switch pair for non-isolated buck or boost converters up to 30 V input and 2 A load. Each MOSFET handles up to 2.3 A / 2 A continuous with 5 nC total gate charge, supporting switching frequencies up to 1 MHz when paired with a small gate driver. The shared thermal pad simplifies PCB layout, since both channels' heat flows into the same copper pour. Compared to two discrete SOT-23 MOSFETs, the BSL308C saves roughly 50% of board area.
Recommended
Automotive Body Electronics and Lighting
With automotive qualification and a -55 °C to +150 °C operating range, the BSL308CH6327XTSA1 is used in 12 V automotive body-electronics modules including interior lighting, mirror control, and small accessory drivers. The complementary channels drive a small brushed DC motor or LED string from the 12 V bus, with the p-channel providing high-side switch isolation and the n-channel providing low-side return. The TSOP-6 package withstands the thermal-cycling profile of the cabin environment, while AEC-Q101 stress testing ensures reliability over vehicle lifetime.
Recommended
Small Brushed DC Motor Drive (H-Bridge Half)
The BSL308CH6327XTSA1 forms one half of an H-bridge to drive small brushed DC motors up to 2 A continuous, with two devices providing full bidirectional control. The n-channel sinks current to ground while the p-channel sources current from the rail, and dead-time insertion is handled by the gate-drive logic. Designers should size the PCB thermal pad to at least 25 mm² for motors above 1 A, and add external flyback diodes or use MOSFETs with integrated body diodes rated for repetitive avalanche. The TSOP-6 footprint is ideal for compact actuator designs.
Recommended
Portable Device Power Management and Load Switching
In portable devices such as wearables, IoT endpoints, and handheld instruments, the BSL308CH6327XTSA1 provides compact load switching for sub-modules like sensors, radios, and displays. The complementary channels switch the rail to peripherals with controlled inrush, while the 5 nC gate charge enables fast turn-on/off transitions in duty-cycled power states. At 3.3 V operation, total on-state loss per channel stays well under 50 mW at typical 500 mA loads, preserving battery runtime. The 2.9 x 1.6 mm TSOP-6 footprint fits within tight wearable enclosures.
Recommended
LED Driver and Backlight Dimming
The BSL308CH6327XTSA1 works as a high-frequency PWM dimming switch for LED backlights and indicators. The n-channel sinks LED current at up to 2.3 A with PWM frequencies above 20 kHz, above the audible band, while the p-channel can disconnect the LED string entirely during deep-sleep states. Total gate charge of 5 nC keeps switching losses below 5 mW at 100 kHz. The TSOP-6 footprint enables compact backlight drivers for TFT displays, signage, and architectural lighting, and the automotive grade supports vehicle interior lighting applications.
Recommended
Industrial Sensor Switching and Signal Routing
In industrial sensor interfaces and signal-routing modules, the BSL308CH6327XTSA1 selects between redundant sensor paths or implements multiplexer-style switching with low leakage and fast settling. The complementary N+P pair routes analog signals up to 30 V with on-state resistance in the milliohm range, minimizing insertion loss. The TSOP-6 footprint fits PLC analog-input cards and process-control modules. Operating temperature range of -55 °C to +150 °C supports factory-floor and outdoor installations where ambient swings are extreme.
Recommended
Recommended Products Summary
Engineering reference data for BSL308CH6327XTSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSL308PEH6327XTSA1 | BSD235CH6327XTSA1 | BSP316PH6327XTSA1 | BSP315PH6327XTSA1 | BSP88H6327XTSA1 | BSS87H6327FTSA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSOP6-6 | PG-TSOP6-6 - same | PG-TSOP6-6 - same | PG-TSOP6-6 - same | PG-TSOP6-6 - same | PG-TSOP6-6 - same | PG-TSOP6-6 - same |
| Configuration | N-channel + P-channel (complementary) | N+P complementary | N+P complementary | Single P-channel | Single N-channel | Single N-channel | Single N-channel |
| Drain-to-Source Voltage (VDS) | 30 V | 30 V | 20 V | 100 V | 60 V | 240 V | 200 V |
| Continuous Drain Current - N-ch | 2.3 A | 2.3 A | 2.0 A | N/A (single P-ch) | 1.7 A | 0.35 A | 0.25 A |
| Continuous Drain Current - P-ch | 2.0 A | 2.0 A | 1.6 A | 1.6 A | N/A (single N-ch) | N/A (single N-ch) | N/A (single N-ch) |
| Total Power Dissipation | 500 mW | 500 mW | 500 mW | 500 mW | 500 mW | 500 mW | 500 mW |
| Total Gate Charge (Qg) @ 10V | 5 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Qualified | Yes | Yes (Infineon suffix) | Yes (Infineon suffix) | Yes (Infineon suffix) | Yes (Infineon suffix) | Yes (Infineon suffix) | Yes (Infineon suffix) |
| Operating Temperature Range | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C |
Key Differentiators
- Complementary N+P channel integration in single TSOP-6 (vs BSP315PH6327XTSA1 + BSP316PH6327XTSA1 (two discrete parts))
- 30 V VDS headroom supports 12 V automotive rails with margin (vs BSD235CH6327XTSA1 (20 V VDS))
- Automotive-qualified OptiMOS™ low-voltage technology (vs BSP315PH6327XTSA1 (single N-channel))
Design Notes
Estimated: at VDS=10 V and 1 A continuous per channel, total power dissipation is 2 x I² x RDS(on). With RDS(on) around 50 mΩ (typ) per channel, dissipation is 2 x (1² x 0.05) = 0.1 W total, well under the 500 mW rating. For 2 A continuous on both channels, dissipation approaches 0.4 W, requiring at least 25 mm² of 1 oz copper pad area on the drain pins. Add thermal vias under the pad to inner copper layers for sustained high-current operation. Derate above 25 °C ambient using the Infineon derating curve.
The TSOP-6 (PG-TSOP6-6) layout requires a thermal pad on the drain pins (3 and 4) sized to the datasheet minimum (typically 6 mm²). Route the high-current paths on drain pins with wide copper pours and use 4-6 thermal vias under the pad to inner planes. Keep gate traces short (under 5 mm) to minimize parasitic inductance that causes ringing during fast switching. Place the gate-drive resistor (10-100 Ω) close to the gate pin to control the turn-on / turn-off di/dt. The two channels share the same thermal environment, so combined power dissipation must be calculated.
Do not drive the p-channel gate below ground - the VGS rating is typically ±20 V. For reverse-polarity battery protection, add an external Zener or Schottky clamp across gate-source. The shared thermal pad in TSOP-6 means both channels' heat flows into the same copper island; running one channel near its SOA limit while switching the other at high frequency causes thermal cross-talk. Verify BVDSS margin under worst-case transient spikes (load-dump in 12 V automotive systems can exceed 40 V, requiring a TVS clamp).
Compliance Information
AEC-Q101 (automotive MOSFET standard) qualified per Infineon part-number suffix; AEC-Q100 reference is analog IC standard - the correct automotive MOSFET qualification standard is AEC-Q101. RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free per Infineon OptiMOS™ family declaration.
