BSO220N03MDGXUMA1 vs BSZ031NE2LS5ATMA1 Comparison
Detailed side-by-side comparison of BSO220N03MDGXUMA1 by Infineon and BSZ031NE2LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSO220N03MDGXUMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.24 | $0.26 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 3M | β |
| Configuration | Dual N-Channel (2N-CH), independent | β |
| Drain-Source Voltage (V_DS) | 30 V | β |
| Continuous Drain Current (I_D) | 7.7 A | β |
| On-State Resistance (R_DS(on)) | 22 mΞ© max @ V_GS=10V | β |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: V_GS max rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min/max] | β |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G nC] | β |
| Power Dissipation (P_D) | 1.4 W | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Package | PG-DSO-8 (SO-8 with exposed pad) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL] |
| RoHS Status | Compliant | Compliant |
| Technology | OptiMOSβ’ 3M (Trench MOSFET) | β |
| Avalanche Rated | Yes | β |
| Part Number | β | BSZ031NE2LS5ATMA1 |
| Technology / Platform | β | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | β | 25 V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta=25C | β | 19 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | β | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | β | 2.1 W |
| Power Dissipation at Tc=25C | β | 30 W |
| Operating Junction Temperature | β | -55 C to +150 C |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |