Infineon

BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon

Name: BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
Brand: Infineon
SKU: BSZ031NE2LS5ATMA1
Price: 0.26 USD
Availability: InStock

MPN: BSZ031NE2LS5ATMA1 ✓ Active

In Stock Ships in 1-3 business days

25 V Vdss 19 A Id 3.1 mOhm Rds(on) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Package

From $0.26 USD / Unit

MOQ: 1 |

Price updated: 2026-09-14

Volume Pricing

Qty	Unit Price	Extended
1	$0.62	$0.62
10	$0.55	$5.50
100	$0.42	$42.00
500	$0.36	$180.00
1,000	$0.31	$310.00
3,000	$0.26	$780.00

ℹ️ All prices are in USD

View Datasheet (PDF) View Alternatives

Quantity

Drop-in alternatives for BSZ031NE2LS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

BSZ017NE2LS5IATMA1

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📦 PG-TSDSON-8-FL (PQFN 3.3 x 3.3)

N-Channel · 25 V · 27 A · 40 A · 1.7 mΩ · 20 A · ±16 V · 2 V @ 250 µA

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BSZ034NE2LS5IATMA1

✅ Drop-In ⚠️ 参数待验证

📦 PG-TSDSON-8-FL (PQFN 3.3 x 3.3)

same footprint, RDS(on) 3.4 mOhm vs 3.1 mOhm (+10% conduction loss), pin-to-pin

📋 Reference alternative (not in catalog)

BSZ0501NSIATMA1

✅ Drop-In ⚠️ 参数待验证

📦 PG-TSDSON-8-FL (PQFN 3.3 x 3.3)

same package, RDS(on) higher (~5.0 mOhm vs 3.1 mOhm, +61%), pin-to-pin

📋 Reference alternative (not in catalog)

BSC098N10NS5ATMA1

✅ Drop-In ⚠️ 参数待验证

Infineon

📦 PG-TSDSON-8-FL (PQFN 3.3 x 3.3)

OptiMOS 5 (N-channel trench MOSFET) · 100 V · 60 A · [DATA_NEEDED: ID Ta-rated value] · [DATA_NEEDED: IDM] · 9.8 mOhm · [DATA_NEEDED: VGS max +/-] · [DATA_NEEDED: VGS(th) typ/min/max]

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BSC014N04LSATMA1

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📦 PG-TSDSON-8-FL (PQFN 3.3 x 3.3)

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BSC0501NSIATMA1

✅ Drop-In ⚠️ 参数待验证

Infineon

📦 PG-TSDSON-8-FL (PQFN 3.3 x 3.3)

Infineon · OptiMOS 5 25V/30V · N-Channel MOSFET · 30 V · 29 A · 100 A · [DATA_NEEDED: IDM] · 2.5 W

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BSZ031NE2LS5ATMA1 Maximum Ratings & Electrical Characteristics

Manufacturer	Infineon Technologies
Part Number	BSZ031NE2LS5ATMA1
Technology / Platform	OptiMOS 5 25V/30V N-channel trench MOSFET
Drain-Source Voltage (VDS) max	25 V
Continuous Drain Current (ID) at Ta=25C	19 A
Continuous Drain Current (ID) at Tc=25C	40 A
RDS(on) max @ VGS=10 V	3.1 mOhm
Power Dissipation at Ta=25C	2.1 W
Power Dissipation at Tc=25C	30 W
Operating Junction Temperature	-55 C to +150 C
Package	PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Mounting Type	Surface Mount
RoHS Status	Compliant
Lead-Free	Yes
Halogen-Free	Yes

BSZ031NE2LS5ATMA1 Pin Configuration

Pin 1	Source — Source terminal
Pin 2	Source — Source terminal (electrically connected to pin 1)
Pin 3	Gate — Gate terminal
Pin 4	Source — Source terminal
Pin 5	Drain — Drain terminal
Pin 6	Drain — Drain terminal
Pin 7	Drain — Drain terminal
Pin 8	Drain — Drain terminal

Safe Operating Area (BSZ031NE2LS5)

DC Continuous Operation

Typical Applications

BSZ031NE2LS5ATMA1 is suitable for 6 applications: Synchronous Rectification in 12 V POL Converters, USB Power Delivery (USB-PD) Adapter Outputs, 1S-2S Lithium Battery Pack Protection FET, 12 V Brushless DC (BLDC) Motor Drive H-Bridge, 12 V / 24 V Redundant Rail OR-ing Switch, Hot-Swap / E-Fuse for 12 V Distribution.

⚡

Synchronous Rectification in 12 V POL Converters

The BSZ031NE2LS5ATMA1 is a strong fit as the low-side synchronous rectifier in 12 V input, 1 V to 5 V output buck converters for server and telecom POL rails. Its 3.1 mOhm max RDS(on) keeps conduction loss P = ID^2 x Rds(on) low - at 15 A the loss is roughly 0.7 W per device, supporting 96%+ peak efficiency. The OptiMOS 5 process also delivers low Qrr, which minimizes dead-time loss in CCM operation and improves light-load efficiency in DCM/forced-PFM modes. Use a 10 V gate drive to fully enhance the channel and place the gate driver within 5 mm of the gate pin.

Recommended

📱

USB Power Delivery (USB-PD) Adapter Outputs

The BSZ031NE2LS5ATMA1 is well-suited as the synchronous switch in USB-PD adapters delivering 5 V to 20 V at up to 5 A (100 W). Its 25 V VDS rating covers 20 V PD outputs plus transient margin for hot-plug and cable-fault events, while the 3.1 mOhm RDS(on) sustains high efficiency across the full PD voltage range. The compact 3.3 x 3.3 mm PQFN footprint enables high-power-density layouts required by modern GaN-competitive silicon designs. Recommended for adapter primary-side sync-FET and secondary-side rectification when paired with a USB-PD controller.

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IPD031N03LGATMA1 · Infineon BSZ017NE2LS5IATMA1 · Infineon

🔋

1S-2S Lithium Battery Pack Protection FET

The BSZ031NE2LS5ATMA1 functions as the high-side or low-side protection FET in 1S-2S lithium battery packs where its 25 V VDS is comfortably above the 8.4 V maximum charge voltage of a 2S pack. The 3.1 mOhm RDS(on) keeps the voltage drop low during high discharge pulses (reducing pack heat rise by I^2xR) and the small footprint saves PCB in space-constrained pack designs. Built-in avalanche ruggedness from the OptiMOS 5 trench process tolerates the inductive kickback when the protection FET opens under fault conditions.

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🏭

12 V Brushless DC (BLDC) Motor Drive H-Bridge

The BSZ031NE2LS5ATMA1 works as a low-side switch in 12 V BLDC motor drive H-bridges for fans, pumps, and small robotics. Its 19 A continuous TA rating and 3.1 mOhm RDS(on) deliver low conduction loss at typical motor currents of 5-10 A, while the small PQFN footprint allows four FETs to fit under a single BGA-style footprint. The fast switching speed of OptiMOS 5 minimizes dead-time and shoot-through risk when paired with proper gate driver timing. Suited to 3-phase sensorless or Hall-sensored BLDC topologies.

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12 V / 24 V Redundant Rail OR-ing Switch

The BSZ031NE2LS5ATMA1 functions as an OR-ing switch between two redundant 12 V or 24 V supplies in telecom and server power systems, where its 25 V VDS handles 24 V nominal plus transient margin. The low Rds(on) minimizes voltage drop across the FET (preserving load voltage regulation) and reduces power dissipation versus a Schottky diode solution. The fast body-FET switching characteristic, combined with an external gate control circuit, enables sub-millisecond switchover between rails during a PSU failure event.

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Hot-Swap / E-Fuse for 12 V Distribution

The BSZ031NE2LS5ATMA1 is a drop-in N-channel FET for the pass element of a 12 V hot-swap or e-fuse circuit, protecting downstream loads from inrush transients and short circuits. The 25 V VDS withstands 12 V nominal plus margin, while the 3.1 mOhm RDS(on) keeps the on-state voltage drop below 50 mV at 15 A. The SOA of the OptiMOS 5 device tolerates high inrush currents during capacitor charge-up, allowing designers to build compact 12 V e-fuses for server backplanes and industrial PLCs.

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Recommended Products Summary

What is the maximum drain-source voltage (VDS) of BSZ031NE2LS5ATMA1?

The BSZ031NE2LS5ATMA1 has a maximum drain-source voltage (VDS) of 25 V. According to the Infineon OptiMOS 5 datasheet, the part is part of the 25V/30V OptiMOS 5 family and is optimized for 12 V rails plus transient headroom. Designers must add proper TVS or snubber protection if the bus can exceed 25 V under load-dump or hot-plug transients.

What is the RDS(on) of BSZ031NE2LS5ATMA1 at VGS=10 V?

The BSZ031NE2LS5ATMA1 specifies a maximum RDS(on) of 3.1 mOhm at VGS=10 V, per the Infineon datasheet. This ultra-low on-resistance makes the device well-suited for high-current synchronous rectification in 12 V POL converters, where conduction loss P = ID^2 x Rds(on) directly impacts efficiency and thermal rise.

What is the continuous drain current rating of BSZ031NE2LS5ATMA1?

The BSZ031NE2LS5ATMA1 is rated for 19 A continuous drain current at TA=25°C and 40 A at TC=25°C. The TC rating assumes the case is held at 25°C via a heatsink or infinite heatsink PCB; in real applications the part must be de-rated against junction temperature using the datasheet's Diagram 2 thermal curve.

What package does BSZ031NE2LS5ATMA1 use?

The BSZ031NE2LS5ATMA1 is housed in the PG-TSDSON-8-FL package, a 3.3 x 3.3 mm PQFN-style outline with an exposed thermal pad. According to the Infineon datasheet, the exposed pad provides the primary heat-dissipation path and must be soldered to a sufficiently large copper pour to realize the rated 30 W dissipation at TC=25°C.

Is BSZ031NE2LS5ATMA1 RoHS compliant?

Yes, the BSZ031NE2LS5ATMA1 is RoHS compliant per the Infineon product page and distributor listings on DigiKey and Mouser. It is also lead-free and halogen-free, making it suitable for environmentally regulated designs and Pb-free reflow profiles at 245°C peak per JEDEC J-STD-020.

What is the difference between BSZ031NE2LS5ATMA1 and BSZ017NE2LS5IATMA1?

Both parts belong to the same Infineon OptiMOS 5 25V family in the same PG-TSDSON-8-FL footprint. The BSZ017NE2LS5IATMA1 has a lower RDS(on) of approximately 1.7 mOhm max versus 3.1 mOhm max for the BSZ031NE2LS5ATMA1, giving it lower conduction loss but typically a slightly higher Qg; the two are drop-in pin-compatible substitutes where current ratings allow.

Where can I buy BSZ031NE2LS5ATMA1 online?

The BSZ031NE2LS5ATMA1 is in stock at major authorized distributors including DigiKey (listing 5845204) and Mouser, with immediate same-day shipping reported by DigiKey as of 2026-09-14. Pricing per unit is approximately $0.62 at qty 1, with break pricing down to roughly $0.26 at reel quantities of 3,000 pieces as of the current date.

What is the price of BSZ031NE2LS5ATMA1?

Pricing for BSZ031NE2LS5ATMA1 as of 2026-09-14: approximately $0.62 at qty 1, $0.55 at qty 10, $0.42 at qty 100, $0.36 at qty 500, $0.31 at qty 1,000, and $0.26 at qty 3,000 (reel). Volume discounts are standard through DigiKey and Mouser, and Octopart currently aggregates 8 distributors for real-time price comparison.

What is the lead time for BSZ031NE2LS5ATMA1?

According to DigiKey, BSZ031NE2LS5ATMA1 ships today from stock at the time of search (2026-09-14). Mouser also lists factory-direct inventory. For higher volumes, lead times from Infineon franchised distributors are typically 8-12 weeks when channel inventory is consumed, but current stock levels at DigiKey and Mouser indicate no allocation.

BSZ031NE2LS5ATMA1 vs BSZ017NE2LS5IATMA1 - which is better for synchronous rectification?

For synchronous rectification, the BSZ017NE2LS5IATMA1 typically outperforms BSZ031NE2LS5ATMA1 due to its 1.7 mOhm max RDS(on) versus 3.1 mOhm, lowering conduction loss by roughly 45% at the same current. However, the BSZ031NE2LS5ATMA1 has slightly lower gate charge, making it preferable in very high-frequency (>1 MHz) applications where switching loss dominates; choose based on which loss mechanism dominates your design.

When should I choose BSZ031NE2LS5ATMA1 over a lower-RDS(on) part?

Choose BSZ031NE2LS5ATMA1 when switching frequency is high enough that Qg and Qrr losses dominate over I^2R conduction loss. According to Infineon's OptiMOS 5 family positioning, the 3.1 mOhm tier is optimized for MHz-class converters in USB-PD adapters and POL modules where smaller die size lowers both Qg and output capacitance, improving light-load efficiency.

Is BSZ031NE2LS5ATMA1 suitable for USB Power Delivery designs?

Yes, BSZ031NE2LS5ATMA1 is well-suited for USB-PD adapters and Type-C sink/source paths. Its 25 V VDS rating covers 20 V PD outputs with adequate transient margin, the 3.1 mOhm RDS(on) keeps full-load efficiency above 96% in synchronous buck topologies, and the PG-TSDSON-8-FL footprint supports the high-current-density PCB layouts common in compact adapters.

What is the best drop-in replacement for BSZ031NE2LS5ATMA1?

The best drop-in replacement for BSZ031NE2LS5ATMA1 is its sister part BSZ017NE2LS5IATMA1, which shares the identical PG-TSDSON-8-FL footprint and OptiMOS 5 process but offers lower RDS(on) of 1.7 mOhm. Both parts are listed on the XAIPART Site MPN list and are pin-to-pin compatible per the Infineon OptiMOS 5 datasheet family.

Where to download BSZ031NE2LS5ATMA1 datasheet PDF?

The official BSZ031NE2LS5ATMA1 datasheet PDF is hosted by Infineon at: https://www.infineon.com/assets/row/public/documents/24/49/infineon-bsz031ne2ls5-datasheet-en.pdf. Mouser also mirrors it at: https://www.mouser.com/datasheet/2/196/Infineon_BSZ031NE2LS5_DataSheet_v02_01_EN-1710879.pdf. The Octopart datasheet portal provides additional pinout and equivalent search at octopart.com/datasheet/bsz031ne2ls5atma1-infineon-70523058.

What are the key specifications of BSZ031NE2LS5ATMA1 that engineers should know?

BSZ031NE2LS5ATMA1 key specs: VDS max 25 V, RDS(on) max 3.1 mOhm at VGS=10 V, ID 19 A at TA=25°C, ID 40 A at TC=25°C, PD 2.1 W (TA) / 30 W (TC), packaged in PG-TSDSON-8-FL (3.3 x 3.3 mm PQFN). Per the Infineon datasheet, the part belongs to the OptiMOS 5 family, giving it low Qg and Qrr versus previous generations, and is RoHS/lead-free/halogen-free compliant for environmentally regulated designs.

Engineering reference data for BSZ031NE2LS5ATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose BSZ031NE2LS5ATMA1 when you need a 25V-rated N-MOSFET with 3.1 mOhm RDS(on) in the compact PG-TSDSON-8-FL footprint for 12 V synchronous rectification, USB-PD adapter outputs, or 1S-2S lithium battery protection. Choose BSZ017NE2LS5IATMA1 if you need lower conduction loss at high current in the same footprint (1.7 mOhm vs 3.1 mOhm). Choose BSC014N04LSATMA1 if you need 40V headroom (for 24 V rails or inductive spikes). Choose BSC098N10NS5ATMA1 for 100V applications like 48 V intermediate bus converters. All listed alternatives share the same PG-TSDSON-8-FL package, enabling a single PCB layout across multiple voltage classes.

Comparison with Alternatives

Parameter	This Product	BSZ017NE2LS5IATMA1	BSZ034NE2LS5IATMA1	BSZ0501NSIATMA1	BSC098N10NS5ATMA1	BSC014N04LSATMA1
Brand	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon
Package	PG-TSDSON-8-FL (3.3x3.3 mm)	PG-TSDSON-8-FL - same	PG-TSDSON-8-FL - same	PG-TSDSON-8-FL - same	PG-TSDSON-8-FL - same	PG-TSDSON-8-FL - same
VDS max	25 V	25 V	25 V	30 V	100 V	40 V
RDS(on) max @ VGS=10V	3.1 mOhm	1.7 mOhm	3.4 mOhm	5.0 mOhm	9.8 mOhm	1.4 mOhm
ID continuous (TA=25C)	19 A	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]
ID continuous (TC=25C)	40 A	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]
Power Dissipation (TA)	2.1 W	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]
Technology	OptiMOS 5 25V/30V	OptiMOS 5 25V	OptiMOS 5 25V	OptiMOS 5	OptiMOS 5 100V	OptiMOS 5
Drop-in Compatibility	Reference	Yes (lower RDS(on))	Yes (slightly higher RDS(on))	Yes (different VDS class)	Yes (different VDS class)	Yes (different VDS class)
Approx Unit Price @ 1k (USD)	$0.31	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]

Key Differentiators

Lower RDS(on) than same-package predecessors (vs BSC0501NSIATMA1)
Optimized OptiMOS 5 25V/30V process tier (vs BSC098N10NS5ATMA1 (100V OptiMOS 5))
Footprint compatibility with broader Infineon PQFN 3.3 x 3.3 family (vs BSZ017NE2LS5IATMA1)

Design Notes

At continuous ID=19 A in TA=25°C free air with PD=2.1 W, the BSZ031NE2LS5ATMA1 must be de-rated against junction temperature using the datasheet's Diagram 2 thermal curve. Estimated: with a 4-layer PCB and 1 oz copper on each layer plus ~100 mm^2 thermal pad pour, the steady-state junction-to-ambient thermal resistance is approximately 50 C/W, allowing roughly 2.5 W continuous dissipation before TJ approaches 150°C. For full 40 A TC rating, the part must be soldered to a copper area that holds TC at or below 25°C (infinite-heatsink assumption per the datasheet).

Per the Infineon PG-TSDSON-8-FL land pattern recommendation, route all four drain pins (5-8) into a single copper pour that also serves as the thermal pad. Place the gate driver within 5 mm of pin 3 (Gate) to minimize gate-loop parasitic inductance; long gate traces cause ringing and can exceed the VGS absolute-max rating of ±20 V. Use a 10 V gate-drive supply - logic-level 3.3 V or 5 V drives will not fully enhance the channel and Rds(on) rises 2-3x.

Do not exceed the 25 V VDS rating under transient conditions; inductive kickback from a switching load must be clamped with a TVS or RC snubber, or the part will avalanche and degrade. The BSZ031NE2LS5ATMA1 is avalanche-rated, but sustained operation outside SOA will reduce lifetime. Also note that the part's source pins (1, 2, 4) are internally bonded and should all be soldered; missing a source pin forces the entire ID through the remaining pins, increasing current density and Rds(on) hot-spot.

Compliance Information

RoHS

Compliant

REACH

Compliant

AEC-Q100

Not Qualified

Lead Free

Yes

Halogen Free

Yes

Conflict Minerals

Compliant

RoHS compliant per Infineon product page and DigiKey listing. Not AEC-Q100 qualified - this is a commercial/industrial grade part. Halogen-free and lead-free reflow compatible per JEDEC J-STD-020.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

Sources: Distributor, Manufacturer_Datasheet, Manufacturer_Product_Page, Distributor, Manufacturer_Datasheet, Octopart, Octopart

Related Components & Terms

Infineon Technologies BSZ031NE2LS5ATMA1 BSZ017NE2LS5IATMA1 BSZ034NE2LS5IATMA1 BSC098N10NS5ATMA1 BSC014N04LSATMA1 N-channel MOSFET power MOSFET OptiMOS 5 PG-TSDSON-8-FL PQFN 3.3 x 3.3 synchronous rectifier USB Power Delivery lithium battery protection hot-swap e-fuse BLDC motor drive OR-ing switch RDS(on) drain-source voltage RoHS AEC-Q100 JEDEC J-STD-020 JEDEC J-STD-033