BSP88H6327XTSA1 vs BSP78HUMA1 Comparison

Detailed side-by-side comparison of BSP88H6327XTSA1 by Infineon and BSP78HUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSP88H6327XTSA1 BSP78HUMA1
Brand Infineon Infineon
Category MOSFETs Power MOSFET Drivers
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 350 mA at Ta=25 C —
Power Dissipation (PD) 1.8 W at Ta=25 C —
Package PG-SOT223-4 (SOT-223-3) PG-SOT223-4 (TO-261-4) with exposed tab
Mounting Type Surface Mount Surface Mount
On-State Resistance (RDS(on)) 6 ohm typical at VGS=10 V —
Configuration Single —
Operating Temperature -55 C to +150 C —
Technology SIPMOS (planar enhancement mode) Smart SIPMOS (N-channel vertical power FET)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL Level [DATA_NEEDED: MSL level] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Drain Tab Connection SOT-223 tab is drain —
Function — Self-protected low-side power switch
Operating Supply Voltage (Vbb) — 4.5 V to 42 V
Continuous Load Current — Up to 3 A
On-state Resistance (Rds(on)) — 200 mΩ typical
Input Logic Level — Logic-level (3.3 V / 5 V compatible)
Current Limitation — Yes (internal)
Thermal Shutdown — Yes (with auto-restart)
Overvoltage Protection — Yes (load-dump tolerant)
Short-circuit Protection — Yes
Overload Protection — Yes
ESD Protection — Yes (on input pin)
Diagnostic Output — Open-drain status flag
Operating Junction Temperature — -40 °C to +150 °C
AEC-Q100 Qualification — Qualified
RoHS Status — Compliant (Green product)

Datasheets & Resources

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