BSS138LT1G vs MMBF170LT1 Comparison

Detailed side-by-side comparison of BSS138LT1G by onsemi and MMBF170LT1 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSS138LT1G MMBF170LT1
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.08 $0.09
Transistor Type N-Channel MOSFET N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 200 mA (Ta) 500 mA (Ta)
Power Dissipation (PD) 225 mW (Ta) —
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET —
Channel Mode Enhancement Mode —
Package SOT-23-3 (TO-236) —
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] —
RoHS Status Compliant (RoHS Compliant and Pb-free per Easybom) Compliant (per onsemi product page)
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters —
Manufacturer — onsemi (ON Semiconductor)
Part Number — MMBF170LT1
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
Operating Temperature Range — -55 °C to +150 °C (TJ max per datasheet)
Package / Case — SOT-23-3 (TO-236)
Pin Count — 3
AEC-Q101 Qualified — Yes (per datasheet)
Technology — DMOS
Polarity — N-Channel

Datasheets & Resources

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