BSS138NH6327XTSA2 vs BSS138LT1G-VB Comparison
Detailed side-by-side comparison of BSS138NH6327XTSA2 by Infineon and BSS138LT1G-VB by VBsemi Elec. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS138NH6327XTSA2 | BSS138LT1G-VB |
|---|---|---|
| Brand | Infineon | VBsemi Elec |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 60 V | — |
| R_DS(on) max @ V_GS=10V | 3.5 ohm | — |
| Continuous Drain Current (Ta) | 230 mA | — |
| Power Dissipation (Ta) | 360 mW | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: typical V_GS(th) value] | — |
| Package | PG-SOT-23 (3-pin) | SOT-23-3 (TO-236) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: Tj max and operating range] | — |
| Gate-Source Voltage V_GS max | ±20 V | — |
| dv/dt Rated | Yes | — |
| Halogen Free | Yes (per IEC 61249-2-21) | — |
| RoHS Compliance | Compliant | — |
| AEC-Q101 Qualification | Qualified | — |
| Lead Plating | Pb-free | — |
| Marking Code | [DATA_NEEDED: top-side marking code] | — |
| Packaging | Tape and Reel | — |
| Transistor Type | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (Vdss) | — | 50 V |
| Continuous Drain Current (Id) | — | 200 mA (Ta) |
| Power Dissipation (Pd) | — | 225 mW (Ta) |
| Configuration | — | Single FET |
| Gate Threshold Voltage (Vgs th) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) Max | — | [DATA_NEEDED: RDS(on)] |
| Drive Voltage | — | [DATA_NEEDED: drive voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Operating Temperature | — | [DATA_NEEDED: operating temperature range] |
| RoHS Status | — | Compliant |
| Manufacturer | — | VBsemi Elec |
| Equivalent To | — | onsemi BSS138LT1G |