BSS138NH6327XTSA2 vs BSS138LT1G-VB 比較
詳細な並列比較: BSS138NH6327XTSA2 メーカー: Infineon および BSS138LT1G-VB メーカー: VBsemi Elec。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSS138NH6327XTSA2 | BSS138LT1G-VB |
|---|---|---|
| ブランド | Infineon | VBsemi Elec |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.15 | $0.02 |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 60 V | — |
| R_DS(on) max @ V_GS=10V | 3.5 ohm | — |
| Continuous Drain Current (Ta) | 230 mA | — |
| Power Dissipation (Ta) | 360 mW | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: typical V_GS(th) value] | — |
| パッケージ | PG-SOT-23 (3-pin) | SOT-23-3 (TO-236) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | [DATA_NEEDED: Tj max and operating range] | — |
| Gate-Source Voltage V_GS max | ±20 V | — |
| dv/dt Rated | Yes | — |
| ハロゲンフリー | Yes (per IEC 61249-2-21) | — |
| RoHS Compliance | Compliant | — |
| AEC-Q101 Qualification | Qualified | — |
| Lead Plating | Pb-free | — |
| Marking Code | [DATA_NEEDED: top-side marking code] | — |
| Packaging | Tape and Reel | — |
| トランジスタタイプ | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (Vdss) | — | 50 V |
| Continuous Drain Current (Id) | — | 200 mA (Ta) |
| Power Dissipation (Pd) | — | 225 mW (Ta) |
| Configuration | — | Single FET |
| Gate Threshold Voltage (Vgs th) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) Max | — | [DATA_NEEDED: RDS(on)] |
| Drive Voltage | — | [DATA_NEEDED: drive voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| 動作温度 | — | [DATA_NEEDED: operating temperature range] |
| RoHS ステータス | — | Compliant |
| Manufacturer | — | VBsemi Elec |
| Equivalent To | — | onsemi BSS138LT1G |