BSS138NH6327XTSA2 vs BSS138LT1G-VB Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS138NH6327XTSA2 disebabkan oleh Infineon dan BSS138LT1G-VB disebabkan oleh VBsemi Elec. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

VBsemi Elec
BSS138LT1G-VB BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS138NH6327XTSA2 BSS138LT1G-VB
Merek Infineon VBsemi Elec
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Operating Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V —
R_DS(on) max @ V_GS=10V 3.5 ohm —
Continuous Drain Current (Ta) 230 mA —
Power Dissipation (Ta) 360 mW —
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] —
Kemasan PG-SOT-23 (3-pin) SOT-23-3 (TO-236)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj max and operating range] —
Gate-Source Voltage V_GS max ±20 V —
dv/dt Rated Yes —
Boson Bebas Yes (per IEC 61249-2-21) —
RoHS Compliance Compliant —
AEC-Q101 Qualification Qualified —
Lead Plating Pb-free —
Marking Code [DATA_NEEDED: top-side marking code] —
Packaging Tape and Reel —
Jenis Transistor — N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (Vdss) — 50 V
Continuous Drain Current (Id) — 200 mA (Ta)
Power Dissipation (Pd) — 225 mW (Ta)
Configuration — Single FET
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: gate threshold voltage]
RDS(on) Max — [DATA_NEEDED: RDS(on)]
Drive Voltage — [DATA_NEEDED: drive voltage]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Suhu Operasi — [DATA_NEEDED: operating temperature range]
Status RoHS — Compliant
Manufacturer — VBsemi Elec
Equivalent To — onsemi BSS138LT1G

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