BSS806NH6327XTSA1 vs BSS816NWH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS806NH6327XTSA1 by Infineon and BSS816NWH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon
BSS806NH6327XTSA1 β Active
Specification Comparison
| Parameter | BSS806NH6327XTSA1 | BSS816NWH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.19 | $0.14 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 2 (trench MOSFET) | OptiMOS 2 trench MOSFET |
| Drain-Source Voltage (VDS) | 20 V | 20 V |
| Continuous Drain Current (ID, Ta) | 2.3 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on) max) | 57 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 1.8 V rated (logic level) | β |
| Gate Drive (recommended VGS) | 1.8 V to 10 V | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | β |
| Power Dissipation (PD, Ta) | 500 mW | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55C to +150C |
| Package | PG-SOT23-3 (SOT-23-3) | SOT-323 (PG-SOT323), 3-pin |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant (Pb-free plating) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | BSS816NW (OptiMOS 2 Small-Signal) |
| Transistor Type | β | MOSFET, N-Channel |
| Continuous Drain Current (ID) at TA=25C | β | 1.4 A |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| RDS(on) max @ VGS=4.5V | β | 160 mOhm |
| RDS(on) max @ VGS=2.5V | β | [DATA_NEEDED: RDS(on) at 2.5V] |
| Power Dissipation (PD) at TA=25C | β | 500 mW |
| Qualification | β | AEC-Q101 (Automotive) |
| ESD Protection | β | Yes (integrated, per Infineon datasheet) |
| RoHS / Lead-Free | β | RoHS compliant, lead-free |