BSZ036NE2LSATMA1 vs BSZ018NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSZ036NE2LSATMA1 by Infineon and BSZ018NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSZ036NE2LSATMA1 | BSZ018NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA=25C | 16 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 37 W | — |
| Package | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C |
| MSL Level | 1 (Unlimited) | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Gate Drive | Logic-level compatible | — |
| Part Number | — | BSZ018NE2LSIATMA1 |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 22 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | — | 1.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 69 W |
| Technology | — | OptiMOS (Infineon trench MOSFET) |